DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, J | - |
dc.contributor.author | Woo, J | - |
dc.contributor.author | Song, J | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2016-04-08T07:32:39Z | - |
dc.date.available | 2016-04-08T07:32:39Z | - |
dc.date.created | 2016-02-24 | - |
dc.date.issued | 2015-12 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.other | 2015-OAK-0000035391 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/29885 | - |
dc.description.abstract | The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (similar to 10(5)) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | - |
dc.description.statementofresponsibility | open | - |
dc.language | English | - |
dc.publisher | American Institute of Physics Inc. | - |
dc.relation.isPartOf | AIP ADVANCES | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | DIFFUSION | - |
dc.subject | MEMORIES | - |
dc.title | Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1063/1.4938548 | - |
dc.author.google | Yoo, J | - |
dc.author.google | Woo, J | - |
dc.author.google | Song, J | - |
dc.author.google | Hwang, H | - |
dc.relation.volume | 5 | - |
dc.relation.issue | 12 | - |
dc.relation.startpage | 127221 | - |
dc.contributor.id | 10079928 | - |
dc.relation.journal | AIP ADVANCES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | AIP ADVANCES, v.5, no.12, pp.127221 | - |
dc.identifier.wosid | 000367596300064 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 127221 | - |
dc.citation.title | AIP ADVANCES | - |
dc.citation.volume | 5 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84951002551 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 15 | - |
dc.description.scptc | 9 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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