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dc.contributor.authorHAN, H-
dc.contributor.authorFORBES, DV-
dc.contributor.authorCOLEMAN, JJ-
dc.date.accessioned2016-04-01T08:39:17Z-
dc.date.available2016-04-01T08:39:17Z-
dc.date.created2009-09-30-
dc.date.issued1995-08-
dc.identifier.issn1041-1135-
dc.identifier.other1995-OAK-0000018014-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/28465-
dc.description.abstractHigh-quality total internal reflection (TIR) mirrors are fabricated by a new self-aligned etch process,using SiCl, reactive ion etching (RIE), The self-aligned etch process requires only a single SiO2 mask layer without additional dielectric depositions and lift-off steps. The reflectivity of the TIR mirrors are measured by characterizing InGaAs-GaAs-AlGaAs strained-layer quantum-well heterostructure crank lasers that consist of crank-shaped ridge waveguides with two TIR mirrors and two cleaved facets, It is found that the self-aligned TIR mirrors have a very high reflectivity of 0.90 (0.46 dB/90 degrees loss).-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGI-
dc.relation.isPartOfIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.subjectQUANTUM-WELL LASERS-
dc.subjectHETEROSTRUCTURE LASERS-
dc.subjectINTEGRATED-CIRCUITS-
dc.subjectGUIDE STRUCTURE-
dc.subjectCURRENT-DENSITY-
dc.subjectBEAM-SPLITTER-
dc.subjectGAIN-CURRENT-
dc.subjectWAVE-GUIDES-
dc.titleSELF-ALIGNED HIGH-QUALITY TOTAL INTERNAL-REFLECTION MIRRORS-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/68.404008-
dc.author.googleHAN, H-
dc.author.googleFORBES, DV-
dc.author.googleCOLEMAN, JJ-
dc.relation.volume7-
dc.relation.issue8-
dc.relation.startpage899-
dc.relation.lastpage901-
dc.contributor.id10056174-
dc.relation.journalIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE PHOTONICS TECHNOLOGY LETTERS, v.7, no.8, pp.899 - 901-
dc.identifier.wosidA1995RP03800026-
dc.date.tcdate2019-01-01-
dc.citation.endPage901-
dc.citation.number8-
dc.citation.startPage899-
dc.citation.titleIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.citation.volume7-
dc.contributor.affiliatedAuthorHAN, H-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.type.docTypeArticle-
dc.subject.keywordPlusQUANTUM-WELL LASERS-
dc.subject.keywordPlusHETEROSTRUCTURE LASERS-
dc.subject.keywordPlusINTEGRATED-CIRCUITS-
dc.subject.keywordPlusGUIDE STRUCTURE-
dc.subject.keywordPlusCURRENT-DENSITY-
dc.subject.keywordPlusBEAM-SPLITTER-
dc.subject.keywordPlusGAIN-CURRENT-
dc.subject.keywordPlusWAVE-GUIDES-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-

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