DC Field | Value | Language |
---|---|---|
dc.contributor.author | Black, CT | - |
dc.contributor.author | Guarini, KW | - |
dc.contributor.author | Zhang, Y | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Benedict, J | - |
dc.contributor.author | Sikorski, E | - |
dc.contributor.author | Babich, IV | - |
dc.contributor.author | Milkove, KR | - |
dc.date.accessioned | 2016-04-01T08:24:02Z | - |
dc.date.available | 2016-04-01T08:24:02Z | - |
dc.date.created | 2009-10-21 | - |
dc.date.issued | 2004-09 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2004-OAK-0000019190 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27884 | - |
dc.description.abstract | We combine nanometer-scale polymer self assembly With advanced semiconductor microfabrication to produce metaloxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The-self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1109/LED.2004.834637 | - |
dc.author.google | Black, CT | - |
dc.author.google | Guarini, KW | - |
dc.author.google | Zhang, Y | - |
dc.author.google | Kim, HJ | - |
dc.author.google | Benedict, J | - |
dc.author.google | Sikorski, E | - |
dc.author.google | Babich, IV | - |
dc.author.google | Milkove, KR | - |
dc.relation.volume | 25 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 622 | - |
dc.relation.lastpage | 624 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.622 - 624 | - |
dc.identifier.wosid | 000223577600011 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 624 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 622 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 25 | - |
dc.contributor.affiliatedAuthor | Kim, HJ | - |
dc.identifier.scopusid | 2-s2.0-4444272969 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 75 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | TEMPLATES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | decoupling capacitor | - |
dc.subject.keywordAuthor | high surface area | - |
dc.subject.keywordAuthor | metaloxide-semiconductor | - |
dc.subject.keywordAuthor | self assembly | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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