DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, DY | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Choi, GB | - |
dc.contributor.author | Jung, SW | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-04-01T08:16:29Z | - |
dc.date.available | 2016-04-01T08:16:29Z | - |
dc.date.created | 2010-02-16 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.other | 2010-OAK-0000019819 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27607 | - |
dc.description.abstract | Thirty-five-nanometer T-gate GaAs-based In0.52Al0.48As/In0.53Ga0.47As metaniorphic high electron mobility transistors (mHEMTs) are successfully fabricated using a zigzag-shaped T-gate. We obtain a maximum extrinsic transconductance (g(m)) of 1060 mS/mm and a maximum oscillation frequency (f(max)) of 610 GHz. These superior results are obtained by reducing the T-gate's length to 35 nm without the assistance of a supporting layer and by fabricating a wide-recessed-gate structure. The stand-alone 35-nm T-gate effectively improves the device performance because it doesn't cause additional parasitic capacitances. The wide-recessed-gate structure alleviates impact ionization in the channel, Which suppresses the kink effect in the output characteristic and reduces the output conductance (9(ds))- In addition, the wide-recessed-gate structure reduces the gate-to-drain capacitance (C-gd); consequently realizing a state-of-the-art f(max) The f(max) of 610 GHz, to our knowledge, is the highest value reported to date for GaAs-based HEMTs. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.subject | GaAs-based HEMTs | - |
dc.subject | mHEMT | - |
dc.subject | Metamorphic | - |
dc.subject | T-gate | - |
dc.subject | Maximum oscillation frequency | - |
dc.subject | INALAS/INGAAS HEMTS | - |
dc.subject | CUTOFF FREQUENCY | - |
dc.title | Thirty-five-nm T-Gate In0.52Al0.48As/In0.53Ga0.47As Metamorphic HEMTs with an Ultrahigh f(max) of 610 GHz | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.3938/JKPS.56.133 | - |
dc.author.google | Choi, DY | - |
dc.author.google | Kim, S | - |
dc.author.google | Choi, GB | - |
dc.author.google | Jung, SW | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 56 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 133 | - |
dc.relation.lastpage | 136 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.1, pp.133 - 136 | - |
dc.identifier.wosid | 000273768200024 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 136 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 133 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 56 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-77954842339 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.scptc | 0 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | GaAs-based HEMTs | - |
dc.subject.keywordAuthor | mHEMT | - |
dc.subject.keywordAuthor | Metamorphic | - |
dc.subject.keywordAuthor | T-gate | - |
dc.subject.keywordAuthor | Maximum oscillation frequency | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
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