DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, U | - |
dc.contributor.author | Daehyun Kang | - |
dc.contributor.author | Dongsu Kim | - |
dc.contributor.author | Jungmin Park | - |
dc.contributor.author | Boshi Jin | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-04-01T03:04:42Z | - |
dc.date.available | 2016-04-01T03:04:42Z | - |
dc.date.created | 2010-04-28 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.other | 2009-OAK-0000020786 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/26223 | - |
dc.description.abstract | As a wireless handset deals with multiple application standards concurrently, RE transmitters and power amplifiers are required to be more power efficient and reconfigurable. In this paper, we review the recent advances in the design of the power amplifiers and transmitters. Then, the systematic design approaches to improve the performance with the digital baseband signal processing are introduced for the next generation mobile handset. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | 대한전자공학회(Institute of Electronics Engineers of Korea) | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.title | Power Amplifiers and Transmitters for Next Generation Mobile Handsets | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.5573/JSTS.2009.9.4.249 | - |
dc.author.google | Choi J., Kang D., Kim D., Park J., Jin B., Kim B. | - |
dc.relation.volume | 9 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 249 | - |
dc.relation.lastpage | 256 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCOPUS | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.9, no.4, pp.249 - 256 | - |
dc.identifier.wosid | 000207882100012 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 256 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 249 | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-73549121746 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 15 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | DYNAMIC BIAS CONTROL | - |
dc.subject.keywordPlus | DIGITAL PREDISTORTION | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.subject.keywordPlus | MODE | - |
dc.subject.keywordAuthor | Transmitters | - |
dc.subject.keywordAuthor | power amplifiers | - |
dc.subject.keywordAuthor | CMOS analog integrated circuits | - |
dc.subject.keywordAuthor | wireless communication | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
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