Semiconductor-Dielectric Blends: A Facile All Solution Route to Flexible All-Organic Transistors
SCIE
SCOPUS
- Title
- Semiconductor-Dielectric Blends: A Facile All Solution Route to Flexible All-Organic Transistors
- Authors
- Lee, WH; Lim, JA; Kwak, D; Cho, JH; Lee, HS; Choi, HH; Cho, K
- Date Issued
- 2009-11-13
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.
- Keywords
- THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; PHASE-SEPARATION; POLYMER; PERFORMANCE; MORPHOLOGY; INTERFACES; TRANSPORT; MOBILITY; BINARY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26193
- DOI
- 10.1002/ADMA.200900277
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 21, no. 42, page. 4243 - +, 2009-11-13
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- There are no files associated with this item.
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