DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jun-Hyun Bae | - |
dc.contributor.author | Sang-Hune Park | - |
dc.contributor.author | Sim, JY | - |
dc.contributor.author | Park, HJ | - |
dc.date.accessioned | 2016-04-01T02:48:11Z | - |
dc.date.available | 2016-04-01T02:48:11Z | - |
dc.date.created | 2010-04-26 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.other | 2010-OAK-0000021564 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25791 | - |
dc.description.abstract | A digital differential transmitter based on CMOS inverter worked up to 2.8 Gbps at the supply voltage of 1 V with a 0.18 mu m CMOS process. By calibrating the output impedance of the transmitter, the impedance matching between the transmitter output and the transmission line is achieved. The PVT variations of pre-driver are compensated by the calibration of the rising-edge delay and falling-edge delay of the pre-driver outputs. The chip fabricated with a 0.18 gm CMOS process, which uses the standard supply voltage of 1.8 V, gives the highest data rate of 4 Gbps at the supply voltage of 1.2 V. The proposed calibration schemes improve the eye opening with the voltage margin by 200% and the timing margin by 30%, at 2.8 Gbps and 1 V. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | 대한전자공학회 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.subject | Transmitter | - |
dc.subject | digital | - |
dc.subject | differential | - |
dc.subject | termination | - |
dc.subject | inverter-based | - |
dc.subject | low voltage | - |
dc.title | A Low-Voltage High-Speed CMOS Inverter-Based Digital Differential Transmitter with Impedance Matching Control and Mismatch Calibration | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.5573/JSTS.2009.9.1.014 | - |
dc.author.google | Bae J.-H. | - |
dc.author.google | Park S.-H. | - |
dc.author.google | Sim J.-Y. | - |
dc.author.google | Park H.-J. | - |
dc.relation.volume | 9 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 14 | - |
dc.relation.lastpage | 21 | - |
dc.contributor.id | 10071836 | - |
dc.relation.journal | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCIE | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.9, no.1, pp.14 - 21 | - |
dc.identifier.wosid | 000207899500004 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 21 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 14 | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | Sim, JY | - |
dc.contributor.affiliatedAuthor | Park, HJ | - |
dc.identifier.scopusid | 2-s2.0-65349156410 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Transmitter | - |
dc.subject.keywordAuthor | digital | - |
dc.subject.keywordAuthor | differential | - |
dc.subject.keywordAuthor | termination | - |
dc.subject.keywordAuthor | inverter-based | - |
dc.subject.keywordAuthor | low voltage | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | other | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
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