DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, JC | - |
dc.contributor.author | Yu, DY | - |
dc.contributor.author | Yang, Y | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-04-01T01:56:37Z | - |
dc.date.available | 2016-04-01T01:56:37Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2006-05 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.other | 2006-OAK-0000005895 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24056 | - |
dc.description.abstract | The linearity of a 0.18-mu m CMOS power amplifier (PA) is improved by adopting a deep n-well (DNW). To find the reason for the improvement, bias dependent nonlinear parameters of the test devices are extracted from a small-signal model and a Volterra series analysis for an optimized nMOS PA with a proper matching circuit is carried out. From the analysis, it is revealed that the DNW of the nMOS lowers the harmonic distortion generated from the intrinsic gate-source capacitance (C-gs), which is the dominant nonlinear source, and partially from drain junction capacitance (C-jd)- Single-ended and differential PAs for 2.45-GHz WLAN are designed and fabricated using a 0.18-mu m standard CMOS process. The single-ended PA with the DNW improves IMD3 and IMD5 about 5 dB with identical power performances, i.e., 20 dBrn of P-out, 18.7 dB of power gain and 31% of power-added efficiency (PAE) at P-1dB. The IMD3 and IMD5 are below -40 dBc and -47 dBc, respectively. The differential PA with the DNW also shows about 7 dB improvements of IMD3 and IMD5 with 20.2 dBm of P-out, 18.9 dB of power gain and 35% of PAE at P-1dB. The IMD3 and IMD5 are below -45 dB and -57 dBc, respectively. These performances of the linear PAs are state-of-the-art results. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.subject | class AB | - |
dc.subject | deep n-well (DNW) | - |
dc.subject | differential PA | - |
dc.subject | harmonic distortion | - |
dc.subject | IMD3 | - |
dc.subject | IMD5 | - |
dc.subject | single-ended PA | - |
dc.subject | Volterra series | - |
dc.subject | TRANSCEIVER | - |
dc.title | Highly linear 0.18-mu m CMOS power amplifier with deep n-well structure | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/JSSC.2006.874059 | - |
dc.author.google | Kang, JC | - |
dc.author.google | Yu, DY | - |
dc.author.google | Yang, Y | - |
dc.author.google | Kim, B | - |
dc.relation.issue | 5 | - |
dc.relation.startpage | 1073 | - |
dc.relation.lastpage | 1080 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.41, no.5, pp.1073 - 1080 | - |
dc.identifier.wosid | 000237210500008 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1080 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1073 | - |
dc.citation.title | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.citation.volume | 41 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-33646425828 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 30 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | class AB | - |
dc.subject.keywordAuthor | deep n-well (DNW) | - |
dc.subject.keywordAuthor | differential PA | - |
dc.subject.keywordAuthor | harmonic distortion | - |
dc.subject.keywordAuthor | IMD3 | - |
dc.subject.keywordAuthor | IMD5 | - |
dc.subject.keywordAuthor | single-ended PA | - |
dc.subject.keywordAuthor | Volterra series | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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