DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, S | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Yong, K | - |
dc.date.accessioned | 2016-04-01T01:24:32Z | - |
dc.date.available | 2016-04-01T01:24:32Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2008-02 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.other | 2008-OAK-0000007606 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22863 | - |
dc.description.abstract | Atomic layer chemical vapor deposition (ALCVD) of titanium silicate nanofilms using a precursor combination of tetrakis-diethylamido-titanium (Ti(N(C2H5)(2))(4)) and tetra-n-butyl-orthosilicate (Si(O-n Bu)(4)) was studied for high dielectric gate oxides. ALCVD temperature window in our study was 170-210 degrees C with a growth rate of 0.8 angstrom/cycle. We investigated the effects of deposition conditions, such as deposition temperature, pulse time of precursor and purge injection, on the titanium silicate nanofilm growth. The saturated composition of Ti/(Ti + Si) ratio was 0.6 and impurity concentrations were less than 1 atomic %. Dielectric constant (k) of the as-deposited titanium silicate film was similar to 10.5. Hysteresis in capacitance-voltage (C-V) measurements was less than 0.35 V before and after annealing. The leakage current density of the as-deposited and 400 degrees C annealed film was 1.4 x 10(-4) A/cm(2), 4.2 x 10(-4) A/cm(2), respectively, at a bias of -1 V. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.subject | ALCVD | - |
dc.subject | titanium silicate | - |
dc.subject | gate oxide | - |
dc.subject | nanofilm | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | N-BUTYL ORTHOSILICATE | - |
dc.subject | THIN-FILMS | - |
dc.subject | HAFNIUM | - |
dc.subject | DIELECTRICS | - |
dc.subject | TETRACHLORIDE | - |
dc.subject | INSULATORS | - |
dc.subject | PRECURSORS | - |
dc.subject | DIOXIDE | - |
dc.title | Growth and characterization of titanium silicate nanofilms for gate oxide applications | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1166/jnn.2008.A206 | - |
dc.author.google | Lee, S | - |
dc.author.google | Kim, J | - |
dc.author.google | Yong, K | - |
dc.relation.volume | 8 | - |
dc.relation.issue | 2 | - |
dc.relation.startpage | 577 | - |
dc.relation.lastpage | 583 | - |
dc.contributor.id | 10131864 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.2, pp.577 - 583 | - |
dc.identifier.wosid | 000254083700015 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 583 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 577 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 8 | - |
dc.contributor.affiliatedAuthor | Yong, K | - |
dc.identifier.scopusid | 2-s2.0-42549171543 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | N-BUTYL ORTHOSILICATE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | HAFNIUM | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | TETRACHLORIDE | - |
dc.subject.keywordPlus | INSULATORS | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | DIOXIDE | - |
dc.subject.keywordAuthor | ALCVD | - |
dc.subject.keywordAuthor | titanium silicate | - |
dc.subject.keywordAuthor | gate oxide | - |
dc.subject.keywordAuthor | nanofilm | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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