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Cited 11 time in webofscience Cited 13 time in scopus
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dc.contributor.authorKim, SY-
dc.contributor.authorHong, K-
dc.contributor.authorKim, K-
dc.contributor.authorLee, JL-
dc.date.accessioned2016-04-01T01:18:50Z-
dc.date.available2016-04-01T01:18:50Z-
dc.date.created2009-02-28-
dc.date.issued2008-06-
dc.identifier.issn1738-8090-
dc.identifier.other2008-OAK-0000007870-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/22698-
dc.description.abstractThe enhancement of quantum efficiency using a Mg-Al alloy cathode and RhOx-coated indium tin oxide (ITO) anode in organic light emitting diodes (OLEDs) is reported. The external quantum efficiency at a current density of 128 mA/cm(2) increased from 0.04% to 0.88% resulting from the Al cathode and ITO anode changing to Mg:Al = 8: 2 cathode and RhOx-coated ITO anode, respectively. The synchrotron radiation photoelectron spectroscopy results show that the work function of the ITO anode increased by 0.2 eV by coating 2 nm thick RhOx and the work function of the Al cathode decreased by 0.4 eV by alloying the Al with Mg. Thus, both the hole and electron injection energy barriers were simultaneously lowered, which reduced the turn-on voltage and increased the quantum efficiency of the OLEDs.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherKOREAN INST METALS MATERIALS-
dc.relation.isPartOfELECTRONIC MATERIALS LETTERS-
dc.subjectorganic light emitting diodes-
dc.subjecthole injection barrier-
dc.subjectelectron injection barrier-
dc.subjectx-ray photoemission spectroscopy-
dc.subjectO-2 plasma treatment-
dc.titleIncrease of quantum efficiency in organic light emitting diodes with Mg-Al alloy cathode and RhO2-coated ITO anode-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.author.googleKim, SY-
dc.author.googleHong, K-
dc.author.googleKim, K-
dc.author.googleLee, JL-
dc.relation.volume4-
dc.relation.issue2-
dc.relation.startpage63-
dc.relation.lastpage66-
dc.contributor.id10105416-
dc.relation.journalELECTRONIC MATERIALS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCIE-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationELECTRONIC MATERIALS LETTERS, v.4, no.2, pp.63 - 66-
dc.identifier.wosid000256960700004-
dc.date.tcdate2019-01-01-
dc.citation.endPage66-
dc.citation.number2-
dc.citation.startPage63-
dc.citation.titleELECTRONIC MATERIALS LETTERS-
dc.citation.volume4-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-57049183115-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc10-
dc.type.docTypeArticle-
dc.subject.keywordAuthororganic light emitting diodes-
dc.subject.keywordAuthorhole injection barrier-
dc.subject.keywordAuthorelectron injection barrier-
dc.subject.keywordAuthorx-ray photoemission spectroscopy-
dc.subject.keywordAuthorO-2 plasma treatment-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.relation.journalResearchAreaMaterials Science-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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