DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, SH | - |
dc.contributor.author | Choi, GB | - |
dc.contributor.author | Baek, RH | - |
dc.contributor.author | Kang, HS | - |
dc.contributor.author | Jung, SW | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-04-01T01:16:24Z | - |
dc.date.available | 2016-04-01T01:16:24Z | - |
dc.date.created | 2017-02-22 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2008-OAK-0000007948 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22642 | - |
dc.description.abstract | RF characteristics of a nanoscale MOSFET are measured and analyzed at temperatures ranging from 4.2 to 300 K for deep-space RF applications. This device shows a 197-GHz current gain cutoff frequency (f(T)) and-a 162-GHz maximum oscillation frequency (f(max)) when operating at liquid-helium temperature, which represent a 60% and 80% improvement compared to room temperature performances, respectively. f(T) continually improves as the temperature decreases to near-liquid.-helium temperature due to the decrease of gate capacitance (C-gg). f(max) decreases as the. temperature is lowered below 25 K due to the increase of gate resistance (R-g). | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | Low-temperature performance of nanoscale MOSFET for deep-space RF applications | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/LED.2008.2000614 | - |
dc.author.google | Hong, SH | - |
dc.author.google | Choi, GB | - |
dc.author.google | Baek, RH | - |
dc.author.google | Kang, HS | - |
dc.author.google | Jung, SW | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 29 | - |
dc.relation.issue | 7 | - |
dc.relation.startpage | 775 | - |
dc.relation.lastpage | 777 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.775 - 777 | - |
dc.identifier.wosid | 000257626000038 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 777 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 775 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 29 | - |
dc.contributor.affiliatedAuthor | Baek, RH | - |
dc.identifier.scopusid | 2-s2.0-47249106947 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.description.scptc | 17 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | cutoff frequency | - |
dc.subject.keywordAuthor | low temperature | - |
dc.subject.keywordAuthor | maximum oscillation. frequency | - |
dc.subject.keywordAuthor | nanoscale MOSFET | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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