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dc.contributor.authorLee, Jko
dc.contributor.authorHan, Iko
dc.contributor.authorYu, BYko
dc.contributor.authorYi, GCko
dc.contributor.authorGhibaudo, Gko
dc.date.accessioned2016-04-01T01:16:08Z-
dc.date.available2016-04-01T01:16:08Z-
dc.date.created2009-02-28-
dc.date.issued2008-01-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.339 - 342-
dc.identifier.issn0374-4884-
dc.identifier.other2008-OAK-0000007955-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/22636-
dc.description.abstractIn this paper, we propose a random walk model as the main generation. mechanism for low-frequency noise in ZnO nanorod structures where surface states are involved. In this model, electrons in the channel can be trapped at surface states and perform a random walk between different surface states before being detrapped into the channel, in this model. Analytic expressions for the spectral noise density and the Hooge parameter are derived and applied to analyze the experimental results on back-gate ZnO-nanorod field-effect transistors from the literature. An analysis using this model provided quantitative information on the surface states in different atmospheric conditions. According to the model, the Hooge parameter is a function of the temperature, carrier concentration, the size of the nanorod and the surface states density and in particular, is inversely proportional to the radius of the nanorod. This model can be utilized in the analysis of low-frequency noise in other types of nanorod devices.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectZnO nanorod-
dc.subjectfield-effect transistors-
dc.subjectlow-frequency noise-
dc.subjectsurface states-
dc.subjectLOW-FREQUENCY NOISE-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectCARBON NANOTUBES-
dc.subjectNANOROD-ARRAYS-
dc.subjectELECTRICAL CHARACTERISTICS-
dc.subjectRANDOM-WALK-
dc.subject1/F NOISE-
dc.subject1-F NOISE-
dc.subjectFABRICATION-
dc.subjectFLUCTUATIONS-
dc.titlePhysical understanding of the Hooge parameter in ZnO nanowire devices-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.author.googleLee, Jungil-
dc.author.googleHan, Ilki-
dc.author.googleYu, Byung-Yong-
dc.author.googleYi, Gyu-Chul-
dc.author.googleGhibaudo, Gerard-
dc.relation.volume53-
dc.relation.issue1-
dc.relation.startpage339-
dc.relation.lastpage342-
dc.publisher.locationKO-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameConference Papers-
dc.type.rimsART-
dc.contributor.localauthorYi, GC-
dc.contributor.nonIdAuthorLee, J-
dc.contributor.nonIdAuthorHan, I-
dc.contributor.nonIdAuthorYu, BY-
dc.contributor.nonIdAuthorGhibaudo, G-
dc.identifier.wosid000257664700073-
dc.date.tcdate2019-01-01-
dc.citation.endPage342-
dc.citation.number1-
dc.citation.startPage339-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume53-
dc.identifier.scopusid2-S2.0-49649085589-
dc.description.journalClass1-
dc.description.wostc4-

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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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