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Cited 20 time in webofscience Cited 26 time in scopus
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dc.contributor.authorJeong, MY-
dc.contributor.authorJeong, YH-
dc.contributor.authorHwang, SW-
dc.contributor.authorKim, DM-
dc.date.accessioned2016-03-31T13:58:11Z-
dc.date.available2016-03-31T13:58:11Z-
dc.date.created2009-08-05-
dc.date.issued1997-11-
dc.identifier.issn0021-4922-
dc.identifier.other1998-OAK-0000000018-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/20921-
dc.description.abstractWe have performed Monte Carlo studies of complementary capacitively coupled single-electron transistor (complementary C-SET) logic gates for single-electron digital logic circuits. The simulations carried out with various types of complementary C-SET logic gates showed that serial connections of single-electron transistors necessary for multi-input operations resulted in the degradation of the switching speed. It is pointed out that the multi-gate single-electron transistor configuration can provide a possible means to circumvent this problem. However, the associated nonsymmetric input-output characteristics could cause the operation failure of the circuit. It is shown that the multi-gate single-electron transistor circuits are the optimal choice from the standpoint of high speed operation and design simplicity, when confined to the input voltages not exceeding four terminals.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherJAPAN J APPLIED PHYSICS-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.subjectsingle-electron tunneling-
dc.subjectCoulomb blockade-
dc.subjectsingle-electron transistor-
dc.subjectsingle-electron transistor logic-
dc.subjectmulti-gate single-electron transistor-
dc.subjectCOULOMB-BLOCKADE-
dc.subjectCIRCUITS-
dc.titlePerformance of single-electron transistor logic composed of multi-gate single-electron transistors-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1143/JJAP.36.6706-
dc.author.googleJeong, MY-
dc.author.googleJeong, YH-
dc.author.googleHwang, SW-
dc.author.googleKim, DM-
dc.relation.volume36-
dc.relation.issue11-
dc.relation.startpage6706-
dc.relation.lastpage6710-
dc.contributor.id10106021-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.36, no.11, pp.6706 - 6710-
dc.identifier.wosid000071172300021-
dc.date.tcdate2019-01-01-
dc.citation.endPage6710-
dc.citation.number11-
dc.citation.startPage6706-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.citation.volume36-
dc.contributor.affiliatedAuthorJeong, YH-
dc.identifier.scopusid2-s2.0-0031271235-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc20-
dc.type.docTypeArticle-
dc.subject.keywordAuthorsingle-electron tunneling-
dc.subject.keywordAuthorCoulomb blockade-
dc.subject.keywordAuthorsingle-electron transistor-
dc.subject.keywordAuthorsingle-electron transistor logic-
dc.subject.keywordAuthormulti-gate single-electron transistor-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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