DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, MY | - |
dc.contributor.author | Jeong, YH | - |
dc.contributor.author | Hwang, SW | - |
dc.contributor.author | Kim, DM | - |
dc.date.accessioned | 2016-03-31T13:58:11Z | - |
dc.date.available | 2016-03-31T13:58:11Z | - |
dc.date.created | 2009-08-05 | - |
dc.date.issued | 1997-11 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 1998-OAK-0000000018 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20921 | - |
dc.description.abstract | We have performed Monte Carlo studies of complementary capacitively coupled single-electron transistor (complementary C-SET) logic gates for single-electron digital logic circuits. The simulations carried out with various types of complementary C-SET logic gates showed that serial connections of single-electron transistors necessary for multi-input operations resulted in the degradation of the switching speed. It is pointed out that the multi-gate single-electron transistor configuration can provide a possible means to circumvent this problem. However, the associated nonsymmetric input-output characteristics could cause the operation failure of the circuit. It is shown that the multi-gate single-electron transistor circuits are the optimal choice from the standpoint of high speed operation and design simplicity, when confined to the input voltages not exceeding four terminals. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.subject | single-electron tunneling | - |
dc.subject | Coulomb blockade | - |
dc.subject | single-electron transistor | - |
dc.subject | single-electron transistor logic | - |
dc.subject | multi-gate single-electron transistor | - |
dc.subject | COULOMB-BLOCKADE | - |
dc.subject | CIRCUITS | - |
dc.title | Performance of single-electron transistor logic composed of multi-gate single-electron transistors | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1143/JJAP.36.6706 | - |
dc.author.google | Jeong, MY | - |
dc.author.google | Jeong, YH | - |
dc.author.google | Hwang, SW | - |
dc.author.google | Kim, DM | - |
dc.relation.volume | 36 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 6706 | - |
dc.relation.lastpage | 6710 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.36, no.11, pp.6706 - 6710 | - |
dc.identifier.wosid | 000071172300021 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 6710 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 6706 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.volume | 36 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-0031271235 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 20 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | single-electron tunneling | - |
dc.subject.keywordAuthor | Coulomb blockade | - |
dc.subject.keywordAuthor | single-electron transistor | - |
dc.subject.keywordAuthor | single-electron transistor logic | - |
dc.subject.keywordAuthor | multi-gate single-electron transistor | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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