DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, CG | - |
dc.contributor.author | Kang, HS | - |
dc.contributor.author | Kwon, YK | - |
dc.contributor.author | Kang, B | - |
dc.date.accessioned | 2016-03-31T13:53:35Z | - |
dc.date.available | 2016-03-31T13:53:35Z | - |
dc.date.created | 2009-08-18 | - |
dc.date.issued | 1998-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 1998-OAK-0000000211 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20779 | - |
dc.description.abstract | The effects of segregated Ge on the electrical properties of the SiO2/SiGe interface are investigated. It is observed that the segregated Ge near the SiO2/SiGe interface, formed during oxidation of the SiGe layer, affects the threshold voltage of a metaloxide-semiconductor (MOS) structure, and that the flat-band voltage shift increases when the Ge segregation is increased. We densities of the interface states and fixed charges are measured using the capacitance-voltage (C-V) method, and the relationships between these results and the material properties are examined. From the results, the SiOx structures are responsible for the increased negative fixed charges near the SiO2/SiGe interface. The mechanism proposed for the generation of negative fixed charges is that the oxygen in the Ge pileup region forms a Si-O-Ge bonding structure initially, and then the weaker Ge-O bond can easily be broken, leaving a Si-O-dangling bond and elemental Ge. The Si-O-dangling bond assumes a negative fixed charge state by trapping an electron. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.subject | oxidation | - |
dc.subject | segregation | - |
dc.subject | SiO2/SiGe interface | - |
dc.subject | oxide charges | - |
dc.subject | NBOHC | - |
dc.subject | OXIDES | - |
dc.subject | SIGE | - |
dc.subject | IMPLANTATION | - |
dc.subject | OXIDATION | - |
dc.subject | PLASMA | - |
dc.subject | LAYER | - |
dc.title | Effects of segregated Ge on electrical properties of SiO2/SiGe interface | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1143/JJAP.37.1316 | - |
dc.author.google | AHN, CG | - |
dc.author.google | KANG, HS | - |
dc.author.google | KWON, YK | - |
dc.author.google | KANG, B | - |
dc.relation.volume | 37 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 1316 | - |
dc.relation.lastpage | 1319 | - |
dc.contributor.id | 10071834 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.3, pp.1316 - 1319 | - |
dc.identifier.wosid | 000073664900061 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1319 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1316 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.volume | 37 | - |
dc.contributor.affiliatedAuthor | Kang, B | - |
dc.identifier.scopusid | 2-s2.0-0012669560 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 27 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | SIGE | - |
dc.subject.keywordPlus | IMPLANTATION | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | oxidation | - |
dc.subject.keywordAuthor | segregation | - |
dc.subject.keywordAuthor | SiO2/SiGe interface | - |
dc.subject.keywordAuthor | oxide charges | - |
dc.subject.keywordAuthor | NBOHC | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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