DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, SI | - |
dc.contributor.author | Jang, HM | - |
dc.date.accessioned | 2016-03-31T13:48:26Z | - |
dc.date.available | 2016-03-31T13:48:26Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1998-09-30 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.other | 1998-OAK-0000000447 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20622 | - |
dc.description.abstract | Thin films of BaxSr1-xTiO3 (BST, with x = 0.5) were fabricated on a RuO2/Ru/SiO2/Si substrate by the spin coating of the multicomponent sol prepared using metal alkoxides. Boron alkoxide was intentionally introduced to establish a better microstructure and to reduce the leakage current. AFM indicated that a crack-free uniform microstructure having a smooth surface was gradually developed with increasing boron content. The relative dielectric permittivity of the 250-nm thick BST thin films fired at 700 degrees C decreased with increasing content of boron, from 420 for the undoped film to 190 for the 10 mol% boron-added film at 1 MHz. This observation was interpreted in terms of a serial capacitance composed of the perovskite BST grain and the interfacial B2O3 glassy phase having a low dielectric permittivity. The leakage current density (J) also decreased with the amount of boron added. The leakage current for the applied voltage greater than 1 V showed a linear variation of log J with E-1/2 at room temperature, suggesting that the interface-controlled Schottky emission was the dominant conduction process for the BST thin films fabricated on the RuO2 electrode. (C) 1998 Elsevier Science S.A. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.subject | BST thin film | - |
dc.subject | sol-gel | - |
dc.subject | boron | - |
dc.subject | sintering additive | - |
dc.subject | Schottky emission | - |
dc.subject | CHARGE | - |
dc.subject | DRAMS | - |
dc.title | Structure and electrical properties of boron-added (Ba,Sr)TiO3 thin films fabricated by the sol-gel method | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/S0040-6090(98)00560-4 | - |
dc.author.google | JANG, SI | - |
dc.author.google | JANG, HM | - |
dc.relation.volume | 330 | - |
dc.relation.issue | 2 | - |
dc.relation.startpage | 89 | - |
dc.relation.lastpage | 95 | - |
dc.contributor.id | 10084272 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.330, no.2, pp.89 - 95 | - |
dc.identifier.wosid | 000076490700007 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 95 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 89 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 330 | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.identifier.scopusid | 2-s2.0-0032157628 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 39 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | BST thin film | - |
dc.subject.keywordAuthor | sol-gel | - |
dc.subject.keywordAuthor | boron | - |
dc.subject.keywordAuthor | sintering additive | - |
dc.subject.keywordAuthor | Schottky emission | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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