DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, WI | - |
dc.contributor.author | An, SJ | - |
dc.contributor.author | Yi, GC | - |
dc.contributor.author | Jang, HM | - |
dc.date.accessioned | 2016-03-31T13:19:02Z | - |
dc.date.available | 2016-03-31T13:19:02Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-05 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.other | 2001-OAK-0000001977 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19554 | - |
dc.description.abstract | High-quality ZnO thin films were grown epitaxially at 250-550 degreesC Al2O3(00.1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 degreesC exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | MATERIALS RESEARCH SOCIETY | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS RESEARCH | - |
dc.subject | THIN-FILMS | - |
dc.subject | DEPOSITION | - |
dc.subject | TEMPERATURE | - |
dc.subject | SAPPHIRE | - |
dc.subject | GAN | - |
dc.title | Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00.1) | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1557/JMR.2001.0190 | - |
dc.author.google | Park, WI | - |
dc.author.google | An, SJ | - |
dc.author.google | Yi, GC | - |
dc.author.google | Jang, HM | - |
dc.relation.volume | 16 | - |
dc.relation.issue | 5 | - |
dc.relation.startpage | 1358 | - |
dc.relation.lastpage | 1362 | - |
dc.relation.journal | JOURNAL OF MATERIALS RESEARCH | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS RESEARCH, v.16, no.5, pp.1358 - 1362 | - |
dc.identifier.wosid | 000168494700023 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1362 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1358 | - |
dc.citation.title | JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.volume | 16 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.identifier.scopusid | 2-s2.0-0035352069 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 91 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | GAN | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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