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Cited 13 time in webofscience Cited 15 time in scopus
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dc.contributor.authorKim, CC-
dc.contributor.authorKim, JK-
dc.contributor.authorLee, JL-
dc.contributor.authorJe, JH-
dc.contributor.authorYi, MS-
dc.contributor.authorNoh, DY-
dc.contributor.authorHwu, Y-
dc.contributor.authorRuterana, P-
dc.date.accessioned2016-03-31T13:18:05Z-
dc.date.available2016-03-31T13:18:05Z-
dc.date.created2009-02-28-
dc.date.issued2001-06-11-
dc.identifier.issn0003-6951-
dc.identifier.other2001-OAK-0000002031-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/19519-
dc.description.abstractWe investigated the structural behavior of the Ni/Au contact on GaN(0001) and found the catalytic role of Au during annealing, using in situ x-ray scattering. The oxidation kinetics of Ni during annealing in air was greatly affected by the presence of Au. The accelerated GaN decomposition and Ni nitride formation during annealing in N-2 also provide evidence of the catalytic role of Au. The results suggest that oxidized Ni/Au ohmic contact exhibit better thermal stability than that of the N-2 annealed Ni/Au contacts. (C) 2001 American Institute of Physics.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.titleCatalytic role of Au in Ni/Au contact on GaN(0001)-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1063/1.1379064-
dc.author.googleKim, CC-
dc.author.googleKim, JK-
dc.author.googleLee, JL-
dc.author.googleJe, JH-
dc.author.googleYi, MS-
dc.author.googleNoh, DY-
dc.author.googleHwu, Y-
dc.author.googleRuterana, P-
dc.relation.volume78-
dc.relation.issue24-
dc.relation.startpage3773-
dc.relation.lastpage3775-
dc.contributor.id10105416-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.78, no.24, pp.3773 - 3775-
dc.identifier.wosid000169226200003-
dc.date.tcdate2019-01-01-
dc.citation.endPage3775-
dc.citation.number24-
dc.citation.startPage3773-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume78-
dc.contributor.affiliatedAuthorKim, JK-
dc.contributor.affiliatedAuthorLee, JL-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0035844444-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc13-
dc.type.docTypeArticle-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusNI-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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