DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JY | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Kang, BK | - |
dc.contributor.author | Kwon, O | - |
dc.date.accessioned | 2016-03-31T12:49:50Z | - |
dc.date.available | 2016-03-31T12:49:50Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-06-23 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2003-OAK-0000003457 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18497 | - |
dc.description.abstract | The effect of surface treatment on leakage current is investigated for two structures of the electropumped GaAs/AlGaAs laser microcavities, one with mesa and the other with hyperboloid-drum structures. Using surface sheet resistivity as a figure-of-merit parameter, the results of different surface treatment methods are compared. The best result is obtained when the sample has been polished in a H2SO4:H2O2:H2O=1:8:1000 solution for 5 s, and treated subsequently in a 6% excess sulfur-containing (NH4)(2)S-x solution at 60 degreesC for 8 mins. The treatment in (NH4)(2)S-x solution increases the surface sheet resistivity by a factor of similar to14. The cross-sectional shape of the cavity and the vertical profile of distributed Bragg reflector mirrors have little correlation with the leakage current. (C) 2003 American Institute of Physics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | Effect of surface treatment on leakage current of GaAs/AlGaAs laser microcavities | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1063/1.1584784 | - |
dc.author.google | Kim, JY | - |
dc.author.google | Lee, J | - |
dc.author.google | Kim, J | - |
dc.author.google | Kang, BK | - |
dc.author.google | Kwon, O | - |
dc.relation.volume | 82 | - |
dc.relation.issue | 25 | - |
dc.relation.startpage | 4504 | - |
dc.relation.lastpage | 4506 | - |
dc.contributor.id | 10123978 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.82, no.25, pp.4504 - 4506 | - |
dc.identifier.wosid | 000183557300032 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4506 | - |
dc.citation.number | 25 | - |
dc.citation.startPage | 4504 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 82 | - |
dc.contributor.affiliatedAuthor | Kang, BK | - |
dc.contributor.affiliatedAuthor | Kwon, O | - |
dc.identifier.scopusid | 2-s2.0-0038044800 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 13 | - |
dc.description.scptc | 14 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PHOTONIC QUANTUM-RING | - |
dc.subject.keywordPlus | GAAS-SURFACES | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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