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Cited 178 time in webofscience Cited 193 time in scopus
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dc.contributor.authorJaesung Park-
dc.contributor.authorSae Byeok Jo-
dc.contributor.authorYoung-Jun Yu-
dc.contributor.authorYoungsoo Kim-
dc.contributor.authorYang, W-
dc.contributor.authorWi Hyoung Lee-
dc.contributor.authorHyun Ho Kim-
dc.contributor.authorByung Hee Hong-
dc.contributor.authorPhilip Kim-
dc.contributor.authorCHO, KIL WON-
dc.contributor.authorKim, KS-
dc.date.accessioned2016-03-31T09:06:32Z-
dc.date.available2016-03-31T09:06:32Z-
dc.date.created2012-01-10-
dc.date.issued2012-01-17-
dc.identifier.issn0935-9648-
dc.identifier.other2012-OAK-0000025143-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/16647-
dc.description.abstractDual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWILEY-BLACKWELL-
dc.relation.isPartOfADVANCED MATERIALS-
dc.titleSingle-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1002/ADMA.201103411-
dc.author.googlePark, J-
dc.author.googleJo, SB-
dc.author.googleYu, YJ-
dc.author.googleKim, Y-
dc.author.googleYang, W-
dc.author.googleLee, WH-
dc.author.googleKim, HH-
dc.author.googleHong, BH-
dc.author.googleKim, P-
dc.author.googleCho, K-
dc.author.googleKim, KS-
dc.relation.volume24-
dc.relation.issue3-
dc.relation.startpage107-
dc.contributor.id10077904-
dc.relation.journalADVANCED MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.24, no.3, pp.407 - +-
dc.identifier.wosid000298945100014-
dc.date.tcdate2019-01-01-
dc.citation.endPage+-
dc.citation.number3-
dc.citation.startPage407-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume24-
dc.contributor.affiliatedAuthorCHO, KIL WON-
dc.contributor.affiliatedAuthorKim, KS-
dc.identifier.scopusid2-s2.0-84862944245-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc126-
dc.description.scptc122*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusSELF-ASSEMBLED MONOLAYERS-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusGAP-
dc.subject.keywordAuthorbilayer graphene-
dc.subject.keywordAuthorfield-effect transistors-
dc.subject.keywordAuthormolecular doping-
dc.subject.keywordAuthorbandgap opening-
dc.subject.keywordAuthorself-assembled monolayers-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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