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Cited 11 time in webofscience Cited 8 time in scopus
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dc.contributor.authorSon, J-
dc.contributor.authorCagnon, J-
dc.contributor.authorBoesch, DS-
dc.contributor.authorStemmer, S-
dc.date.accessioned2016-03-31T08:32:22Z-
dc.date.available2016-03-31T08:32:22Z-
dc.date.created2013-05-01-
dc.date.issued2008-06-
dc.identifier.issn1882-0778-
dc.identifier.other2008-OAK-0000027545-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/15533-
dc.description.abstractTunnel junction devices employing epitaxial, (001)-oriented SrTiO(3) barriers with thicknesses between 4 and 5nm were fabricated by sputtering on (001) Pt/MgO substrates. The quality of the Pt/SrTiO(3) interface was characterized by transmission electron microscopy and the current transport studied as a function of temperature and bias field. At low voltages the junctions showed excellent insulting properties and temperature dependent, non-linear current-voltage characteristics. If junctions were biased to high fields (>1.25 MV/cm) current hysteresis was observed. The hysteresis is shown to be due to time-dependent tunnel barrier properties at high fields. (C) 2008 The Japan Society of Applied Physics.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherThe Japanese Society of Applied Physics-
dc.relation.isPartOfApplied Physics Express-
dc.subjectTHIN-FILM-
dc.subjectSPIN-POLARIZATION-
dc.subjectJUNCTIONS-
dc.subjectFERROELECTRICITY-
dc.subjectTEMPERATURE-
dc.subjectDEPENDENCE-
dc.titleEpitaxial SrTiO(3) tunnel barriers on Pt/MgO substrates-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1143/APEX.1.061603-
dc.author.googleSon, J-
dc.author.googleCagnon, J-
dc.author.googleBoesch, DS-
dc.author.googleStemmer, S-
dc.relation.volume1-
dc.relation.issue6-
dc.contributor.id10138992-
dc.relation.journalApplied Physics Express-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationApplied Physics Express, v.1, no.6-
dc.identifier.wosid000257272600013-
dc.date.tcdate2019-01-01-
dc.citation.number6-
dc.citation.titleApplied Physics Express-
dc.citation.volume1-
dc.contributor.affiliatedAuthorSon, J-
dc.identifier.scopusid2-s2.0-57649089153-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc11-
dc.description.scptc7*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusSPIN-POLARIZATION-
dc.subject.keywordPlusJUNCTIONS-
dc.subject.keywordPlusFERROELECTRICITY-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusDEPENDENCE-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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손준우SON, JUNWOO
Dept of Materials Science & Enginrg
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