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Cited 3 time in webofscience Cited 3 time in scopus
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dc.contributor.authorKi-Hwan Seong-
dc.contributor.authorJi-Hoon Lim-
dc.contributor.authorKim, B-
dc.contributor.authorSim, JY-
dc.contributor.authorPark, HJ-
dc.date.accessioned2016-03-31T07:30:14Z-
dc.date.available2016-03-31T07:30:14Z-
dc.date.created2015-02-09-
dc.date.issued2014-08-
dc.identifier.issn1598-1657-
dc.identifier.other2014-OAK-0000032042-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/13703-
dc.description.abstractA Verilog model is proposed for transmission lines to perform the all-Verilog simulation of high-speed chip-to-chip interface system, which reduces the simulation time by around 770 times compared to the mixed-mode simulation. The single-pulse response of transmission line in SPICE model is converted into that in Verilog model by converting the full-scale analog signal into an 11-bit digital code after uniform time sampling. The receiver waveform of transmission line is calculated by adding or subtracting the single-pulse response in Verilog model depending on the transmitting digital code values with appropriate time delay. The application of this work to a USB 2.0 high-speed PHY interface reduces the simulation time to less than three minutes with error less than 5% while the mixed-mode simulation takes more than two days for the same circuit.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisher대한전자공학회-
dc.relation.isPartOfJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.titleVerilog Modeling of Transmission Line for USB 2.0 High-Speed PHY Interface-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.5573/JSTS.2014.14.4.463-
dc.author.googleSeong, KH-
dc.author.googleLim, JH-
dc.author.googleKim, B-
dc.author.googleSim, JY-
dc.author.googlePark, HJ-
dc.relation.volume14-
dc.relation.issue4-
dc.relation.startpage463-
dc.relation.lastpage470-
dc.contributor.id11082511-
dc.relation.journalJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCIE-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.14, no.4, pp.463 - 470-
dc.identifier.wosid000346136600013-
dc.date.tcdate2019-01-01-
dc.citation.endPage470-
dc.citation.number4-
dc.citation.startPage463-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume14-
dc.contributor.affiliatedAuthorKim, B-
dc.contributor.affiliatedAuthorSim, JY-
dc.contributor.affiliatedAuthorPark, HJ-
dc.identifier.scopusid2-s2.0-84906887829-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc3-
dc.description.scptc3*
dc.date.scptcdate2018-05-121*
dc.description.isOpenAccessY-
dc.type.docTypeArticle-
dc.subject.keywordAuthorVerilog-
dc.subject.keywordAuthortransmission line-
dc.subject.keywordAuthorUSB 2.0 high-speed PHY-
dc.subject.keywordAuthormixed-mode simulation-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-

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김병섭KIM, BYUNGSUB
Dept of Electrical Enginrg
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