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Cited 27 time in webofscience Cited 28 time in scopus
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dc.contributor.authorKang, CJ-
dc.contributor.authorChoi, HC-
dc.contributor.authorKim, K-
dc.contributor.authorMin, BI-
dc.date.accessioned2015-07-22T19:06:27Z-
dc.date.available2015-07-22T19:06:27Z-
dc.date.created2015-06-18-
dc.date.issued2015-04-22-
dc.identifier.issn0031-9007-
dc.identifier.other2015-OAK-0000032808en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/13229-
dc.description.abstractWe have investigated temperature-dependent behaviors of electronic structure and resistivity in a mixed-valent golden phase of SmS, based on the dynamical mean-field-theory band-structure calculations. Upon cooling, the coherent Sm 4f bands are formed to produce the hybridization-induced pseudogap near the Fermi level, and accordingly the topology of the Fermi surface is changed to exhibit a Lifshitz-like transition. The surface states emerging in the bulk gap region are found to be not topologically protected states but just typical Rashba spin-polarized states, indicating that SmS is not a topological Kondo semimetal. From the analysis of anomalous resistivity behavior in SmS, we have identified universal energy scales, which characterize the Kondo-mixed-valent semimetallic systems.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.subjectSEMICONDUCTOR-METAL TRANSITION-
dc.subjectHEAVY-FERMION SYSTEMS-
dc.subjectHIGH-PRESSURE-
dc.subjectINTERMEDIATE-VALENCE-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectSAMARIUM SULFIDE-
dc.subjectSMB6-
dc.subjectMONOCHALCOGENIDES-
dc.subjectSTATES-
dc.subjectGAP-
dc.titleTopological Properties and the Dynamical Crossover from Mixed-Valence to Kondo-Lattice Behavior in the Golden Phase of SmS-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PHYSREVLETT.114.166404-
dc.author.googleKang, CJen_US
dc.author.googleChoi, HCen_US
dc.author.googleKim, Ken_US
dc.author.googleMin, BIen_US
dc.relation.volume114en_US
dc.relation.issue16en_US
dc.contributor.id10069852en_US
dc.relation.journalPHYSICAL REVIEW LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW LETTERS, v.114, no.16-
dc.identifier.wosid000353289300009-
dc.date.tcdate2019-01-01-
dc.citation.number16-
dc.citation.titlePHYSICAL REVIEW LETTERS-
dc.citation.volume114-
dc.contributor.affiliatedAuthorMin, BI-
dc.identifier.scopusid2-s2.0-84929598541-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc7-
dc.description.scptc7*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusSEMICONDUCTOR-METAL TRANSITION-
dc.subject.keywordPlusHEAVY-FERMION SYSTEMS-
dc.subject.keywordPlusHIGH-PRESSURE-
dc.subject.keywordPlusINTERMEDIATE-VALENCE-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusSAMARIUM SULFIDE-
dc.subject.keywordPlusSMB6-
dc.subject.keywordPlusMONOCHALCOGENIDES-
dc.subject.keywordPlusSTATES-
dc.subject.keywordPlusGAP-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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