DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dong Yeong Kim | - |
dc.contributor.author | Guan-bo Lin | - |
dc.contributor.author | Sunyong Hwang | - |
dc.contributor.author | Jun Hyuk Park | - |
dc.contributor.author | David Meyaard | - |
dc.contributor.author | E. Fred Schubert | - |
dc.contributor.author | Han Youl Ryu | - |
dc.contributor.author | Kim, JK | - |
dc.date.accessioned | 2015-07-07T19:04:18Z | - |
dc.date.available | 2015-07-07T19:04:18Z | - |
dc.date.created | 2015-02-11 | - |
dc.date.issued | 2015-02 | - |
dc.identifier.issn | 1943-0655 | - |
dc.identifier.other | 2015-OAK-0000031904 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13068 | - |
dc.description.abstract | A genetic algorithm is employed to find an optimum epitaxial structure of multiple quantum wells (MQWs) and electron-blocking layer (EBL) for a GaInN-based light-emitting diode (LED). The optimized LED is composed of locally Si-doped quantum barriers (QBs) in the MQWs and a quaternary heterostructured AlGaInN EBL having a polarization-induced electric field directed oppositely to that of a conventional AlGaN EBL. The optimized LED shows 15.6% higher internal quantum efficiency, 24.6% smaller efficiency droop, and 0.21 V lower forward voltage at 200 A/cm(2) comparing to the reference LED, which has fully Si-doped QB and 20-nm-thick Al0.19Ga0.81N EBL. We find that local Si doping near the QB/QW interface compensates the negative polarization-induced sheet charge at the interface and reduces electric field in the QWs, thereby enhancing electron-hole wave function overlap. In addition, the inverted polarization field in the quaternary EBL provides a high barrier for electrons but a low barrier for holes, resulting in enhanced electron-blocking and hole-injection characteristics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | IEEE Photonics Society | - |
dc.relation.isPartOf | IEEE PHOTONICS JOURNAL | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.subject | ight-emitting diodes | - |
dc.subject | genetic algorithm | - |
dc.subject | polarization engineering | - |
dc.title | Polarization-engineered high efficiency GaInN light-emitting diodes optimized by genetic algorithm | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1109/JPHOT.2014.2387263 | - |
dc.author.google | Kim, DY | en_US |
dc.author.google | Lin, GB | en_US |
dc.author.google | Hwang, S | en_US |
dc.author.google | Park, JH | en_US |
dc.author.google | Meyaard, D | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Ryu, HY | en_US |
dc.author.google | Kim, JK | en_US |
dc.relation.volume | 7 | en_US |
dc.relation.issue | 1 | en_US |
dc.relation.startpage | 1300209 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | IEEE PHOTONICS JOURNAL | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCIE | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE PHOTONICS JOURNAL, v.7, no.1, pp.1300209 | - |
dc.identifier.wosid | 000349678100003 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1300209 | - |
dc.citation.title | IEEE PHOTONICS JOURNAL | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-84946780303 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Light-emitting diodes | - |
dc.subject.keywordAuthor | genetic algorithm | - |
dc.subject.keywordAuthor | polarization engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
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