DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ik-Jyae | - |
dc.contributor.author | Lee, Jang-Sik | - |
dc.date.accessioned | 2024-01-30T02:50:22Z | - |
dc.date.available | 2024-01-30T02:50:22Z | - |
dc.date.created | 2023-12-11 | - |
dc.date.issued | 2024-03 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/119957 | - |
dc.description.abstract | Hafnia-based ferroelectrics have gained much attention because they can be used in highly scaled, advanced complementary metal-oxide semiconductor (CMOS) memory devices. However, thermal stability should be considered when integrating hafnia-based ferroelectric transistors in advanced CMOS devices, as they can be exposed to high-temperature processes. This work proposed that doping of Al in hafnia-based ferroelectric material can lead to high thermal stability. A ferroelectric capacitor based on Al-doped hafnia, which can be used for one-transistor-one-capacitor applications, exhibits stable operation even after annealing at 900 °C. Moreover, it demonstrates that the ferroelectric transistors based on Al-doped hafnia for one-transistor applications, such as ferroelectric NAND, retain their memory states for 10 years at 100 °C. This study presents a practical method to achieve thermally stable ferroelectric memories capable of enduring high-temperature processes and operation conditions. | - |
dc.language | English | - |
dc.publisher | John Wiley and Sons Inc | - |
dc.relation.isPartOf | Small | - |
dc.title | Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/smll.202306871 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Small, v.20, no.13 | - |
dc.identifier.wosid | 001101912400001 | - |
dc.citation.number | 13 | - |
dc.citation.title | Small | - |
dc.citation.volume | 20 | - |
dc.contributor.affiliatedAuthor | Kim, Ik-Jyae | - |
dc.contributor.affiliatedAuthor | Lee, Jang-Sik | - |
dc.identifier.scopusid | 2-s2.0-85176391755 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordAuthor | ferroelectric thin-film transistors | - |
dc.subject.keywordAuthor | thermal stability | - |
dc.subject.keywordAuthor | data retention | - |
dc.subject.keywordAuthor | ferroelectric materials | - |
dc.subject.keywordAuthor | ferroelectric memories | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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