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Cited 22 time in webofscience Cited 18 time in scopus
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dc.contributor.authorKIM, JH-
dc.contributor.authorKIM, JJ-
dc.contributor.authorLEE, HJ-
dc.date.accessioned2015-06-25T02:57:52Z-
dc.date.available2015-06-25T02:57:52Z-
dc.date.created2009-03-19-
dc.date.issued1992-11-01-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000008644en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/11963-
dc.description.abstractWe report the temperature and magnetic-field dependence of electrical resistance of indium/indium-oxide (In/InOx) composite granular films in the insulating regime. The films show Mott variable-range hopping behavior at high temperatures, crossing over to a region of a much stronger temperature dependence of resistance near the superconducting transition temperature T(c) of the grains. Below the crossover temperature the films show a large and negative magnetoresistance with a field dependence of ln[R(T,H)/R(T,0)] is-proportional-to H-2 in the low-field limit. We show that the temperature dependence of the zero-field resistance is well explained by a modified version of the conduction model for granular systems proposed by Adkins et al., which indicates that the crossover behavior of zero-field resistance is an effect of the grain superconductivity rather than the crossover from Mott to Efros-Shklovskii conduction. We also show that the magnetoresistance data can be explained quantitatively with the same model by taking into account the suppression of the gap in an external field.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleSUPERCONDUCTIVITY EFFECT ON ELECTRICAL-CONDUCTION IN INSULATING GRANULAR FILMS-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.46.11709-
dc.author.googleKIM, JHen_US
dc.author.googleKIM, JJen_US
dc.author.googleLEE, HJen_US
dc.relation.volume46en_US
dc.relation.startpage11709en_US
dc.relation.lastpage11713en_US
dc.contributor.id10080084en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.46, no.18, pp.11709 - 11713-
dc.identifier.wosidA1992JX92900049-
dc.citation.endPage11713-
dc.citation.number18-
dc.citation.startPage11709-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume46-
dc.contributor.affiliatedAuthorLEE, HJ-
dc.identifier.scopusid2-s2.0-0009374003-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc16-
dc.type.docTypeArticle-
dc.subject.keywordPlusRANGE-HOPPING CONDUCTIVITY-
dc.subject.keywordPlusN-TYPE CDSE-
dc.subject.keywordPlusCOULOMB GAP-
dc.subject.keywordPlusDISORDERED-SYSTEMS-
dc.subject.keywordPlusNEGATIVE MAGNETORESISTANCE-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusMETALS-
dc.subject.keywordPlusALUMINUM-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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