DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sungho Nam | - |
dc.contributor.author | Yong-Gi Ko | - |
dc.contributor.author | Suk Gyu Hahm | - |
dc.contributor.author | Soohyeong Park | - |
dc.contributor.author | Jooyeok Seo | - |
dc.contributor.author | Hyena Lee | - |
dc.contributor.author | Hwajeong Kim | - |
dc.contributor.author | Ree, M | - |
dc.contributor.author | Youngkyoo Kim | - |
dc.date.accessioned | 2015-06-25T02:53:25Z | - |
dc.date.available | 2015-06-25T02:53:25Z | - |
dc.date.created | 2013-12-20 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.issn | 1884-4049 | - |
dc.identifier.other | 2015-OAK-0000028500 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11824 | - |
dc.description.abstract | Developing organic nonvolatile memory devices with a writing/reading/erasing logic function in actual array structures is extremely important for realizing low-cost lightweight/flexible plastic electronic systems. Here, we demonstrate that organic field-effect transistors (OFETs) with a polymer energy well structure (PEW-OFET) exhibit excellent nonvolatile memory performances. The PEW structure is created by sandwiching a self-doped poly(o-anthranilic acid) (SD-PARA) nanolayer (high dielectric constant, k = 14) between two low-dielectric polymer layers (k = 2-4). The primary idea behind this concept is the rapid storage and retrieval of charge carriers in the PEW layer during operation due to the high k feature of the SD-PARA nanolayer, which aids the rapid transport of charge carriers inside, whereas the stored charges are safely trapped due to the two low k layers. The results indicate that the PEW-OFET memory devices exhibit outstanding retention characteristics upon continuous reading up to 2000 s after writing, whereas their excellent writing/reading/erasing/reading cyclability is demonstrated in a test with 43000 cycles. Therefore, the present simple yet cost-effective PEW-OFET concept is expected to significantly contribute to the development of low-cost plastic memory array devices because all processes can be inexpensively performed at low temperatures and additional logic transistors are unnecessary. NPG Asia Materials (2013) 5, e33; doi: 10.1038/am.2012.62; published online 18 January 2013 | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | Nature Publishing Group | - |
dc.relation.isPartOf | NPG Asia Materials | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Organic nonvolatile memory transistors with self-doped polymer energy well structures | - |
dc.type | Article | - |
dc.contributor.college | 화학과 | en_US |
dc.identifier.doi | 10.1038/AM.2012.62 | - |
dc.author.google | Nam, S | en_US |
dc.author.google | Ko, YG | en_US |
dc.author.google | Kim, Y | en_US |
dc.author.google | Ree, M | en_US |
dc.author.google | Kim, H | en_US |
dc.author.google | Lee, H | en_US |
dc.author.google | Seo, J | en_US |
dc.author.google | Park, S | en_US |
dc.author.google | Hahm, SG | en_US |
dc.relation.volume | 5 | en_US |
dc.relation.startpage | E33 | en_US |
dc.contributor.id | 10115761 | en_US |
dc.relation.journal | NPG Asia Materials | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCIE | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NPG Asia Materials, v.5, pp.E33 | - |
dc.identifier.wosid | 000314213100001 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.startPage | E33 | - |
dc.citation.title | NPG Asia Materials | - |
dc.citation.volume | 5 | - |
dc.contributor.affiliatedAuthor | Ree, M | - |
dc.identifier.scopusid | 2-s2.0-84878890946 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.description.scptc | 18 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SEMICONDUCTING POLYMER | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | energy well | - |
dc.subject.keywordAuthor | organic nonvolatile memory | - |
dc.subject.keywordAuthor | self-doped poly(o-anthranilic acid) | - |
dc.subject.keywordAuthor | silver electrode | - |
dc.subject.keywordAuthor | transistor | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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