DC Field | Value | Language |
---|---|---|
dc.contributor.author | Min, SW | - |
dc.contributor.author | Lee, HS | - |
dc.contributor.author | Choi, HJ | - |
dc.contributor.author | Park, MK | - |
dc.contributor.author | Nam, T | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Ryu, S | - |
dc.contributor.author | Im, S | - |
dc.date.accessioned | 2015-06-25T02:50:36Z | - |
dc.date.available | 2015-06-25T02:50:36Z | - |
dc.date.created | 2015-03-04 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.other | 2015-OAK-0000032476 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11736 | - |
dc.description.abstract | We report on the nanosheet-thickness effects on the performance of top-gate MoS2 field-effect transistors (FETs), which is directly related to the MoS2 dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al2O3 displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO2, benefiting from the dielectric screening by high-k Al2O3. Among the top-gate devices, the single-layered FET demonstrated the highest mobility of similar to 170 cm(2) V-1 s(-1) with 90 mV dec(-1) as the smallest subthreshold swing (SS) but the double-and triple-layered FETs showed only similar to 25 and similar to 15 cm(2) V-1 s(-1) respectively with the large SS of 0.5 and 1.1 V dec(-1). Such property degradation with MoS2 thickness is attributed to its dielectric constant increase, which could rather reduce the benefits from the top-gate high-k dielectric. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | RSC PUBLISHING | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance | - |
dc.type | Article | - |
dc.contributor.college | 화학과 | en_US |
dc.identifier.doi | 10.1039/C2NR33443G | - |
dc.author.google | Min, SW | en_US |
dc.author.google | Lee, HS | en_US |
dc.author.google | Im, S | en_US |
dc.author.google | Ryu, S | en_US |
dc.author.google | Kim, H | en_US |
dc.author.google | Nam, T | en_US |
dc.author.google | Park, MK | en_US |
dc.author.google | Choi, HJ | en_US |
dc.relation.volume | 5 | en_US |
dc.relation.issue | 2 | en_US |
dc.relation.startpage | 548 | en_US |
dc.relation.lastpage | 551 | en_US |
dc.contributor.id | 10166105 | en_US |
dc.relation.journal | NANOSCALE | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.5, no.2, pp.548 - 551 | - |
dc.identifier.wosid | 000313426200014 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 551 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 548 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 5 | - |
dc.contributor.affiliatedAuthor | Ryu, S | - |
dc.identifier.scopusid | 2-s2.0-84871758711 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 53 | - |
dc.description.scptc | 53 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN | - |
dc.subject.keywordPlus | EXFOLIATION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | LAYERS | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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