Article
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Cited 2 time in
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | PARK, SEONGMIN | - |
| dc.contributor.author | CHANG, MIN JEON | - |
| dc.contributor.author | SEO, TAEWON | - |
| dc.contributor.author | LEE, YONGGYU | - |
| dc.contributor.author | CHUNG, YOONYOUNG | - |
| dc.date.accessioned | 2023-02-20T05:40:58Z | - |
| dc.date.available | 2023-02-20T05:40:58Z | - |
| dc.date.created | 2023-02-20 | - |
| dc.date.issued | 2022-05 | - |
| dc.identifier.issn | 2588-8420 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/115320 | - |
| dc.language | English | - |
| dc.publisher | Elsevier Ltd. | - |
| dc.relation.isPartOf | Materials Today Nano | - |
| dc.title | Defect Generation in Data-Storage Layer by Strong Ion Bombardment for Multi-level Non-volatile Memory Applications | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1016/j.mtnano.2022.100226 | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | Materials Today Nano, v.19 | - |
| dc.identifier.wosid | 000855689600002 | - |
| dc.citation.title | Materials Today Nano | - |
| dc.citation.volume | 19 | - |
| dc.contributor.affiliatedAuthor | PARK, SEONGMIN | - |
| dc.contributor.affiliatedAuthor | CHANG, MIN JEON | - |
| dc.contributor.affiliatedAuthor | SEO, TAEWON | - |
| dc.contributor.affiliatedAuthor | CHUNG, YOONYOUNG | - |
| dc.identifier.scopusid | 2-s2.0-85132906254 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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- 정윤영CHUNG, YOONYOUNG
- Dept of Electrical Enginrg