Rotation of Graphene on Cu during Chemical Vapor Deposition and Its Application to Control the Stacking Angle of Bilayer Graphene
- Rotation of Graphene on Cu during Chemical Vapor Deposition and Its Application to Control the Stacking Angle of Bilayer Graphene
- CHO, HYE YEON; Son, Yelim; Choi, Hee Cheul
- Date Issued
- American Chemical Society
- © 2022 American Chemical Society. All rights reserved.Control of the stacking angle (θS) of bilayer graphene (BLG) is essential for fundamental studies and applications of BLG. Especially, the use of chemical vapor deposition (CVD) to grow high-quality BLG requires this control, but methods to achieve it are not available. Here, we found that graphene rotates during the CVD process, and this action can be exploited as a new strategy to control θS. The rotation of graphene was revealed by the population changes of AB-stacked BLG and 30°-twisted BLG upon the growth time change; this change can only be explained by rotation of graphene. The rotation is largely affected by the edge state of graphene which can be tuned by growth temperature. The rotation was observed through experimental results combined with theoretical calculation. The rotation can be blocked or accelerated by controlling the growth temperature, by which highly selective growth of AB-stacked BLG or 30°-twisted BLG can be achieved.
- Article Type
- Nano Letters, vol. 22, no. 8, page. 3323 - 3327, 2022-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.