DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Kim, JY | - |
dc.contributor.author | Rhee, SW | - |
dc.contributor.author | Yang, DY | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Yang, CH | - |
dc.contributor.author | Han, YK | - |
dc.contributor.author | Hwang, CJ | - |
dc.date.accessioned | 2015-06-25T02:34:12Z | - |
dc.date.available | 2015-06-25T02:34:12Z | - |
dc.date.created | 2009-03-16 | - |
dc.date.issued | 2000-09 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.other | 2015-OAK-0000010236 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11215 | - |
dc.description.abstract | Pure Ru thin films were deposited on Si substrate using Ru (OD)(3) (OD = octanedionate) as a new liquid precursor with a newly designed warm wall reactor by metalorganic chemical vapor deposition (MOCVD). Resistivity and film structure were largely dependent on MOCVD process parameters such as deposition temperature, O-2/(O-2+Ar) ratio, and reactor pressure. With the increase of O-2/(O-2+Ar) ratio, minimum resistivity (20 mu Omega cm) was obtained and then the resistivity was increased due to the abnormal increase of surface roughness. By modifying the position of a single quartz injector, uniform deposition of Ru thin films on an 8 in. Si wafer could be obtained. (C) 2000 American Vacuum Society. [S0734-2101(00)08305-6]. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD)(3) (OD=octanedionate) | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1116/1.1289693 | - |
dc.author.google | Lee, JH | en_US |
dc.author.google | Kim, JY | en_US |
dc.author.google | Hwang, CJ | en_US |
dc.author.google | Han, YK | en_US |
dc.author.google | Yang, CH | en_US |
dc.author.google | Kim, DH | en_US |
dc.author.google | Yang, DY | en_US |
dc.author.google | Rhee, SW | en_US |
dc.relation.volume | 18 | en_US |
dc.relation.issue | 5 | en_US |
dc.relation.startpage | 2400 | en_US |
dc.relation.lastpage | 2403 | en_US |
dc.contributor.id | 10052631 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.18, no.5, pp.2400 - 2403 | - |
dc.identifier.wosid | 000089434800054 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2403 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2400 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 18 | - |
dc.contributor.affiliatedAuthor | Rhee, SW | - |
dc.identifier.scopusid | 2-s2.0-34272603 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 27 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.