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Cited 12 time in webofscience Cited 9 time in scopus
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dc.contributor.authorHan, JH-
dc.contributor.authorRhee, SW-
dc.contributor.authorMoon, SH-
dc.date.accessioned2015-06-25T02:29:56Z-
dc.date.available2015-06-25T02:29:56Z-
dc.date.created2009-03-16-
dc.date.issued1996-06-
dc.identifier.issn0013-4651-
dc.identifier.other2015-OAK-0000011082en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/11077-
dc.description.abstractPyrolysis of silanes, difluorosilane, and their mixtures has been observed by mass spectroscopy under isothermal conditions. The rates of SiH4 pyrolysis show a large compensation effect at low pressure, which agrees with the theory of unimolecular reaction. The pyrolysis rates of difluorosilane and silanes are enhanced synergistically when they are mixed together. The reaction mechanism proposed in this study for pyrolysis of the Si-containing species explains the observed experimental results well.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.isPartOfJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titlePyrolysis mechanism of silanes, difluorosilane, and their mixtures-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1149/1.1836938-
dc.author.googleHan, JHen_US
dc.author.googleRhee, SWen_US
dc.author.googleMoon, SHen_US
dc.relation.volume143en_US
dc.relation.issue6en_US
dc.relation.startpage1996en_US
dc.relation.lastpage2002en_US
dc.contributor.id10052631en_US
dc.relation.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.143, no.6, pp.1996 - 2002-
dc.identifier.wosidA1996UQ66200048-
dc.date.tcdate2019-01-01-
dc.citation.endPage2002-
dc.citation.number6-
dc.citation.startPage1996-
dc.citation.titleJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.citation.volume143-
dc.contributor.affiliatedAuthorRhee, SW-
dc.identifier.scopusid2-s2.0-0030171122-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc10-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHEMICAL VAPOR-DEPOSITION-
dc.subject.keywordPlusMATHEMATICAL-MODEL-
dc.subject.keywordPlusEPITAXIAL-GROWTH-
dc.subject.keywordPlusUNIMOLECULAR DECOMPOSITION-
dc.subject.keywordPlusSILICON EPITAXY-
dc.subject.keywordPlusFLUID-MECHANICS-
dc.subject.keywordPlusLOW-TEMPERATURE-
dc.subject.keywordPlusKINETICS-
dc.subject.keywordPlusREACTOR-
dc.subject.keywordPlusCHEMISTRY-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-

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