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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Xu, CK | - |
| dc.contributor.author | Chun, J | - |
| dc.contributor.author | Rho, K | - |
| dc.contributor.author | Kim, DE | - |
| dc.contributor.author | Kim, BJ | - |
| dc.contributor.author | Yoon, S | - |
| dc.contributor.author | Han, SE | - |
| dc.contributor.author | Kim, JJ | - |
| dc.date.accessioned | 2015-06-25T02:14:33Z | - |
| dc.date.available | 2015-06-25T02:14:33Z | - |
| dc.date.created | 2009-08-20 | - |
| dc.date.issued | 2006-03-15 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.other | 2015-OAK-0000005813 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10586 | - |
| dc.description.abstract | The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7 at. % is reported. The magnetism measurements show that the Curie temperature is above 350 K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n-type semiconductor. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Ferromagnetic GaN : MnAlSi nanowires | - |
| dc.type | Article | - |
| dc.contributor.college | 물리학과 | en_US |
| dc.identifier.doi | 10.1063/1.2174125 | - |
| dc.author.google | Xu, CK | en_US |
| dc.author.google | Chun, J | en_US |
| dc.author.google | Kim, JJ | en_US |
| dc.author.google | Han, SE | en_US |
| dc.author.google | Yoon, S | en_US |
| dc.author.google | Kim, BJ | en_US |
| dc.author.google | Kim, DE | en_US |
| dc.author.google | Rho, K | en_US |
| dc.relation.volume | 99 | en_US |
| dc.relation.issue | 6 | en_US |
| dc.relation.startpage | 64312 | en_US |
| dc.relation.lastpage | 64312 | en_US |
| dc.contributor.id | 10075453 | en_US |
| dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.99, no.6, pp.64312 - 64312 | - |
| dc.identifier.wosid | 000236464400063 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 64312 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 64312 | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 99 | - |
| dc.contributor.affiliatedAuthor | Kim, DE | - |
| dc.identifier.scopusid | 2-s2.0-33645775456 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 22 | - |
| dc.description.scptc | 22 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
| dc.subject.keywordPlus | MAGNETOELECTRONICS | - |
| dc.subject.keywordPlus | SEMICONDUCTOR | - |
| dc.subject.keywordPlus | NANOTUBES | - |
| dc.subject.keywordPlus | ELECTRON | - |
| dc.subject.keywordPlus | (GA,MN)N | - |
| dc.subject.keywordPlus | GALLIUM | - |
| dc.subject.keywordPlus | PHYSICS | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 김동언KIM, DONG EON
- Dept of Physics