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Cited 53 time in webofscience Cited 59 time in scopus
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dc.contributor.authorTengzhou Yang-
dc.contributor.authorQian Wu-
dc.contributor.authorFuhua Dai-
dc.contributor.authorKairong Huang-
dc.contributor.authorHuihua Xu-
dc.contributor.authorChenning Liu-
dc.contributor.authorChangdong Che-
dc.contributor.authorSujuan Hu-
dc.contributor.authorXiaoci Liang-
dc.contributor.authorXuying Liu-
dc.contributor.authorNOH, YONG YOUNG-
dc.contributor.authorChuan Liu-
dc.date.accessioned2021-06-01T05:03:21Z-
dc.date.available2021-06-01T05:03:21Z-
dc.date.created2021-03-04-
dc.date.issued2020-05-
dc.identifier.issn1616-301X-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/105604-
dc.description.abstractMany advanced materials have been developed for organic field‐effect transistors (OFETs) or thin‐film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low‐power circuits and integrated sensors are also discussed.-
dc.languageEnglish-
dc.publisherJohn Wiley & Sons Ltd.-
dc.relation.isPartOfAdvanced Functional Materials-
dc.titleUnderstanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors-
dc.typeArticle-
dc.identifier.doi10.1002/adfm.201903889-
dc.type.rimsART-
dc.identifier.bibliographicCitationAdvanced Functional Materials, v.30, no.20, pp.1903889 - 1903889-
dc.identifier.wosid000481341000001-
dc.citation.endPage1903889-
dc.citation.number20-
dc.citation.startPage1903889-
dc.citation.titleAdvanced Functional Materials-
dc.citation.volume30-
dc.contributor.affiliatedAuthorNOH, YONG YOUNG-
dc.identifier.scopusid2-s2.0-85070753712-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeReview-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusSELF-ASSEMBLED MONOLAYERS-
dc.subject.keywordPlusCHARGE-CARRIER MOBILITY-
dc.subject.keywordPlusGATE DIELECTRIC INTERFACES-
dc.subject.keywordPlusVERTICAL PHASE-SEPARATION-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusCONTACT RESISTANCE-
dc.subject.keywordPlusLOW-VOLTAGE-
dc.subject.keywordPlusWORK-FUNCTIONS-
dc.subject.keywordAuthordevice physics-
dc.subject.keywordAuthorfield-effect transistor-
dc.subject.keywordAuthororganic semiconductor-
dc.subject.keywordAuthorreliability-
dc.subject.keywordAuthorthin-film transistor-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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노용영NOH, YONG YOUNG
Dept. of Chemical Enginrg
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