DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sim, JY | - |
dc.contributor.author | Kwon, KW | - |
dc.contributor.author | Chun, KC | - |
dc.contributor.author | Seo, DI | - |
dc.date.accessioned | 2015-06-25T02:00:20Z | - |
dc.date.available | 2015-06-25T02:00:20Z | - |
dc.date.created | 2009-08-24 | - |
dc.date.issued | 2004-05 | - |
dc.identifier.issn | 0916-8524 | - |
dc.identifier.other | 2015-OAK-0000018258 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10284 | - |
dc.description.abstract | This paper proposes a sensing and a precharge circuit schemes suitable for low-voltage and high-speed DRAM design. The proposed offset-compensated direct sensing scheme improves refresh characteristics as well as speed performance. To minimize the number of control switches for the offset compensation, only the output branches of differential amplifiers are implemented in each bit-line pair with a semi-global bias branch, which also reduces 50-percent of bias current. The addition of the direct sensing feature to the offset-compensated pre-sensing dramatically increases the differential current output. For the fast bit-line equalization, a charge-recycled precharge scheme is proposed to reuse VPP discharging current for the generation of a boosted bias without additional charge pumping. The two circuit schemes were verified by the implementation of a 256 Mb SDRAM with a 0.1 mum dual-doped poly-silicon technology. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.relation.isPartOf | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Offset-compensated direct sensing and charge-recycled precharge schemes for sub-1.0 V high-speed DRAM's | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | en_US |
dc.author.google | Sim, JY | en_US |
dc.author.google | Kwon, KW | en_US |
dc.author.google | Seo, DI | en_US |
dc.author.google | Chun, KC | en_US |
dc.relation.volume | E87C | en_US |
dc.relation.issue | 5 | en_US |
dc.relation.startpage | 801 | en_US |
dc.relation.lastpage | 808 | en_US |
dc.contributor.id | 10100874 | en_US |
dc.relation.journal | IEICE TRANSACTIONS ON ELECTRONICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCIE | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEICE TRANSACTIONS ON ELECTRONICS, v.E87C, no.5, pp.801 - 808 | - |
dc.identifier.wosid | 000221445300022 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 808 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 801 | - |
dc.citation.title | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.volume | E87C | - |
dc.contributor.affiliatedAuthor | Sim, JY | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | low voltage DRAM | - |
dc.subject.keywordAuthor | sensing | - |
dc.subject.keywordAuthor | precharge | - |
dc.subject.keywordAuthor | offset compensation | - |
dc.subject.keywordAuthor | charge-recycling | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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