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dc.contributor.authorNoh, HJ-
dc.contributor.authorKoh, H-
dc.contributor.authorOh, SJ-
dc.contributor.authorPark, JH-
dc.contributor.authorKim, HD-
dc.contributor.authorRameau, JD-
dc.contributor.authorValla, T-
dc.contributor.authorKidd, TE-
dc.contributor.authorJohnson, PD-
dc.contributor.authorHu, Y-
dc.contributor.authorLi, Q-
dc.date.accessioned2015-06-25T01:54:07Z-
dc.date.available2015-06-25T01:54:07Z-
dc.date.created2009-09-11-
dc.date.issued2008-03-
dc.identifier.issn0295-5075-
dc.identifier.other2015-OAK-0000007717en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10169-
dc.description.abstractThe electronic structure of p-type doped Bi2Te3 is studied by angle-resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off. the Gamma-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of Bi2Te3. A successive time-dependent ARPES measurement also reveals that the electron-like bands crossing E-F near the (Gamma) under bar -point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of Bi2Te3. Copyright (c) EPLA, 2008.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherEDP SCIENCES S A-
dc.relation.isPartOfEPL-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleSpin-orbit interaction effect in the electronic structure of Bi2Te3 observed by angle-resolved photoemission spectroscopy-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1209/0295-5075/81/57006-
dc.author.googleNoh, HJen_US
dc.author.googleKoh, Hen_US
dc.author.googleLi, Qen_US
dc.author.googleHu, Yen_US
dc.author.googleJohnson, PDen_US
dc.author.googleKidd, TEen_US
dc.author.googleValla, Ten_US
dc.author.googleRameau, JDen_US
dc.author.googleKim, HDen_US
dc.author.googlePark, JHen_US
dc.author.googleOh, SJen_US
dc.relation.volume81en_US
dc.relation.issue5en_US
dc.contributor.id10080407en_US
dc.relation.journalEPLen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationEPL, v.81, no.5-
dc.identifier.wosid000255369000024-
dc.date.tcdate2019-01-01-
dc.citation.number5-
dc.citation.titleEPL-
dc.citation.volume81-
dc.contributor.affiliatedAuthorPark, JH-
dc.identifier.scopusid2-s2.0-42649118503-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc74-
dc.type.docTypeArticle-
dc.subject.keywordPlusBISMUTH TELLURIDE-
dc.subject.keywordPlusTHERMOELECTRIC PROPERTIES-
dc.subject.keywordPlusVALENCE-BAND-
dc.subject.keywordPlusMERIT-
dc.subject.keywordPlusFIGURE-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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