DC Field | Value | Language |
---|---|---|
dc.contributor.author | Argunova, TS | - |
dc.contributor.author | Gutkin, MY | - |
dc.contributor.author | Je, JH | - |
dc.contributor.author | Lim, JH | - |
dc.contributor.author | Mokhov, EN | - |
dc.contributor.author | Roenkov, AD | - |
dc.date.accessioned | 2015-06-25T01:48:41Z | - |
dc.date.available | 2015-06-25T01:48:41Z | - |
dc.date.created | 2015-02-04 | - |
dc.date.issued | 2014-01 | - |
dc.identifier.issn | 1466-8033 | - |
dc.identifier.other | 2015-OAK-0000030895 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10080 | - |
dc.description.abstract | Using synchrotron X-ray topography and phase-contrast imaging, we investigated lattice defects in bulk SiC crystals grown by physical vapor transport in a free spreading condition. We find that polytype inclusions appearing at initial growth stage are overgrown by the matrix, making pores which are then transformed into micropipes with a low density of 10 cm(-2), in particular, in the lateral region. We propose that complex planar defects configured from dislocations and micropipes are transformed into slit pores via vacancy-diffusion and micropipes-attraction mechanisms. Our finding suggests that suppression of the nucleation of foreign polytype inclusions is a key approach for providing high quality free spreading SiC growth. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | CRYSTENGCOMM | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1039/C4CE01515K | - |
dc.author.google | Argunova, TS | en_US |
dc.author.google | Gutkin, MY | en_US |
dc.author.google | Roenkov, AD | en_US |
dc.author.google | Mokhov, EN | en_US |
dc.author.google | Lim, JH | en_US |
dc.author.google | Je, JH | en_US |
dc.relation.volume | 16 | en_US |
dc.relation.issue | 37 | en_US |
dc.relation.startpage | 8917 | en_US |
dc.relation.lastpage | 8923 | en_US |
dc.contributor.id | 10123980 | en_US |
dc.relation.journal | CRYSTENGCOMM | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CRYSTENGCOMM, v.16, no.37, pp.8917 - 8923 | - |
dc.identifier.wosid | 000341359200037 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 8923 | - |
dc.citation.number | 37 | - |
dc.citation.startPage | 8917 | - |
dc.citation.title | CRYSTENGCOMM | - |
dc.citation.volume | 16 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-84906861563 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.scptc | 0 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | SUPERSCREW DISLOCATIONS | - |
dc.subject.keywordPlus | LATERAL ENLARGEMENT | - |
dc.subject.keywordPlus | MICROPIPES | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Crystallography | - |
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