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dc.contributor.authorSeo, J.-
dc.contributor.authorKim, B.-
dc.date.accessioned2019-12-05T08:10:18Z-
dc.date.available2019-12-05T08:10:18Z-
dc.date.created2018-07-18-
dc.date.issued2017-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/100363-
dc.description.abstractThis paper analyzes effects of design parameters on the read margin of an ReRAM crossbar array. Because ReRAM's crossbar array suffers from small read margin, design parameters must be optimized for large read margin. In this paper, by simulating ReRAM crossbar arrays with various design parameters, we analyze the relations between the read margin and the design parameters: 1) the line resistor, 2) the sensing resistor, 3) the HRS and LRS resistances, and 4) the selectors. ? 2016 IEEE.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.relation.isPartOf2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016-
dc.titleRead margin analysis in an ReRAM crossbar array-
dc.typeArticle-
dc.identifier.doi10.1109/APCCAS.2016.7804006-
dc.type.rimsART-
dc.identifier.bibliographicCitation2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, pp.473 - 475-
dc.citation.endPage475-
dc.citation.startPage473-
dc.citation.title2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016-
dc.contributor.affiliatedAuthorKim, B.-
dc.identifier.scopusid2-s2.0-85011105591-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeConference Paper-
dc.subject.keywordAuthorcrossbar array-
dc.subject.keywordAuthorread margin-
dc.subject.keywordAuthorReRAM-
dc.description.journalRegisteredClassscopus-

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김병섭KIM, BYUNGSUB
Dept of Electrical Enginrg
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