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Browsing by  AuthorMoon K.

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Article
Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)SCOPUS

Digest of Technical Papers - Symposium on VLSI Technology, 2014-09

Article
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrodeSCIESCOPUS

Technical Digest - International Electron Devices Meeting, IEDM, page. 10.5.1 - 10.5.4, 2013-12

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