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Showing results 1 to 1 of 1
Article
Topological modification of the electronic structure by Bi-bilayers lying deep inside bulk Bi2Se3
SCIE
SCOPUS
JOURNAL OF PHYSICS-CONDENSED MATTER, vol. 28, no. 8, page. 85002, 2016-03-02
Lee, P
;
Kim, J
;
Kim, JG
;
Ryu, MT
;
Park, HM
;
et al
1
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