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Conference
Comprehensive Methodology for ReRAM and Selector Design Guideline of Cross-Point Array

IEEE International Memory Workshop, 2015-05-17

Thesis
NbO2-based Insulator-Metal-Transition Devices for High Density Memory and Steep-Slope Transistor Applications

Thesis(Doctor), 2020

Article
Steep Slope Field-Effect Transistors With B-Te-Based Ovonic Threshold Switch DeviceSCIESCOPUS

IEEE Journal of the Electron Devices Society, vol. 6, no. 1, page. 821 - 824, 2018-07

1
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