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NOH, YONG YOUNG(노용영) orcid researcherid scopus

Department: Dept. of Chemical Engineering(화학공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-20 of 41 (Search time: 0.002 seconds).

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Journal Registered : scie

Article

One-step sorting of nearly single-chiral carbon nanotubes with (10,9) chirality of 1.3 nm diameter by backbone planarization of polydioctylfluorenesSCIESCOPUS

Carbon, vol. 219, 2024-02

Article

All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide DielectricSCIESCOPUS

ACS Nano, vol. 18, no. 3, page. 1958 - 1968, 2024-01

Article

Neuromorphic computing based on halide perovskitesSCIESCOPUS

Nature Electronics, vol. 6, no. 12, page. 949 - 962, 2023-12

Article

Boosting the Performance of Photomultiplication-Type Organic Photodiodes by Embedding CsPbBr3 Perovskite NanocrystalsSCIESCOPUS

Advanced Science, vol. 11, no. 7, 2023-12

Article

A Large Bandgap Organic Salt Dopant for Sn-Based Perovskite Thin-Film TransistorSCIESCOPUS

Advanced Materials for Optics and Electronics, page. 2303759, 2023-10

Article

Charge transfer enabled by the p-doping of WSe<sub>2</sub> for 2D material-based printable electronicsSCIESCOPUSKCI

Journal of Information Display, vol. 24, no. 4, page. 255 - 261, 2023-10

Article

Tin perovskite transistors and complementary circuits based on A-site cation engineeringSCIESCOPUS

Nature Electronics, vol. 6, no. 9, page. 650 - 657, 2023-09

Article

High-performance metal halide perovskite transistorsSCIESCOPUS

Nature Electronics, vol. 6, no. 8, page. 559 - 571, 2023-08

Article

Recent progress in the development of backplane thin film transistors for information displaysSCIESCOPUSKCI

Journal of Information Display, vol. 24, no. 3, page. 159 - 168, 2023-07

Article

High-Performance Solution-Processed 2D P-Type WSe2 Transistors and Circuits through Molecular DopingSCIESCOPUS

Advanced Materials, 2023-02

Article

Ion Migration Induced Unusual Charge Transport in Tin Halide PerovskitesSCIESCOPUS

ACS Energy Letters, vol. 8, no. 2, page. 957 - 962, 2023-01

Article

Antimony fluoride (SbF3): A potent hole suppressor for tin(II)‐halide perovskite devicesSCIESCOPUS

InfoMat, vol. 5, no. 1, 2023-01

Article

POSTECH as the Hub of Innovative Materials Research in South Korea over the last 35 YearsSCIESCOPUS

Advanced Materials, vol. 35, no. 4, 2023-01

Article

Highly Conductive p-Type Transparent Conducting Electrode with Sulfur-Doped Copper IodideSCIESCOPUS

Chemistry of Materials, vol. 34, no. 23, page. 10517 - 10527, 2022-12

Article

Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur DopingSCIESCOPUS

Advanced Electronic Materials, page. 2201014, 2022-12

Article

High performance carbon nanotubes thin film transistors by selective ferric chloride dopingSCIESCOPUSKCI

Journal of Information Display, page. 1 - 10, 2022-11

Article

Sn‐Based Perovskite Halides for Electronic DevicesSCIESCOPUS

Advanced Science, vol. 9, no. 33, page. 2203749, 2022-11

Article

Pursuing High-Performance Organic Field-Effect Transistors through Organic Salt DopingSCIESCOPUS

Advanced Functional Materials, vol. 32, no. 18, 2022-05

Article

Modulation of vacancy-ordered double perovskite Cs2SnI6 for air-stable thin-film transistorsSCIESCOPUS

Cell Reports Physical Science, vol. 3, no. 4, page. 100812, 2022-04

Article

High-performance inorganic metal halide perovskite transistorsSCIESCOPUS

Nature Electronics, vol. 5, no. 2, page. 78 - 83, 2022-02

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