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KIM, JONG KYU(김종규) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Results 1-14 of 14 (Search time: 0.002 seconds).

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Author : Lee, JW

Article

Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane EmissionSCIESCOPUS

ACS Photonics, vol. 3, no. 11, page. 2030 - 2034, 2016-11

Article

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emissionSCIESCOPUS

SCIENTIFIC REPORTS, vol. 6, page. 22537, 2016-03-03

Article

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodesSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 119, no. 2, page. 19580, 2016-01-14

Article

Distinct U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodesSCIESCOPUS

OPTICS EXPRESS, vol. 23, no. 12, page. 15398 - 15404, 2015-06-15

Article

Opto-electronic properties of TiO2 nanohelices with embedded HC(NH2)(2)PbI3 perovskite solar cellsSCIESCOPUS

Journal of Materials Chemistry A, vol. 3, no. 17, page. 9179 - 9186, 2015-01

Article

Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaNSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 2, page. L8 - L12, 2001-02

Article

Transparent Pt ohmic contact on p-type GaN with low resistivity using (NH4)(2)S-x treatmentSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 3, no. 1, page. 53 - 55, 2000-01

Article

Reduction of ohmic contact resistivity on p-type GaN by surface treatmentSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 176, no. 1, page. 763 - 766, 1999-11-16

Article

Effect of An overlayer on Ni contacts to p-type GaNSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 6, page. 2675 - 2678, 1999-11

Article

Low transparent Pt ohmic contact on p-type GaN by surface treatment using aqua regiaSCIESCOPUS

ELECTRONICS LETTERS, vol. 35, no. 19, page. 1676 - 1678, 1999-09-16

Article

Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopySCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 74, no. 16, page. 2289 - 2291, 1999-04-19

Article

Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaNSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 2, page. 497 - 499, 1999-03

Article

Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaNSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 43, no. 2, page. 435 - 438, 1999-02

Article

Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatmentSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 73, no. 20, page. 2953 - 2955, 1998-11-16

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