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Subject : light emitting diodes

Article

Visible Color Tunable Emission in Three-Dimensional Light Emitting Diodes by MgO Passivation of Pyramid TipSCIESCOPUS

ACS Applied Materials and Interfaces, vol. 7, no. 50, page. 27743 - 27748, 2015-12-23

Article

Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodesSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 107, no. 6, page. 63102, 2010-03-15

Article

Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriersSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 95, no. 24, page. 241109 - 241109, 2009-12-14

Article

Partial Polarization Matching in GaInN-Based Multiple Quantum Well Blue LEDs Using Ternary GaInN Barriers for a Reduced Efficiency DroopSCIESCOPUS

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 15, no. 4, page. 1122 - 1127, 2009-07

Article

High output power density from GaN-based two-dimensional nanorod light-emitting diode arraysSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 94, no. 14, 2009-04-06

Article

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodesSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 94, no. 8, 2009-02-23

Article

On resonant optical excitation and carrier escape in GaInN/GaN quantum wellsSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 94, no. 8, 2009-02-23

Article

REDUCTION IN EFFICIENCY DROOP, FORWARD VOLTAGE, IDEALITY FACTOR, AND WAVELENGTH SHIFT IN POLARIZATION-MATCHED GAINN/GAINN MULTI-QUANTUM-WELL LIGHT-EMITTING DIODESSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 94, no. 1, page. 11113 - 11113, 2009-01-05

Article

Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillarsSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 93, no. 22, 2008-12-01

Article

Optimization of high-quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor-phase epitaxySCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 36, no. 4, page. 533 - 537, 2007-04

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