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Date Issued : 2021

Article

Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ DielectricSCIESCOPUS

Acs Applied Electronic Materials, vol. 3, no. 12, page. 5632 - 5640, 2021-12-28

Article

Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse FormingSCIESCOPUS

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, vol. 9, page. 864 - 867, 2021-09

Article

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric deviceSCIESCOPUS

NANOTECHNOLOGY, vol. 32, no. 31, 2021-07

Article

Multinary Data Processing Based on Nonlinear Synaptic DevicesSCIESCOPUS

Journal of Electronic Materials, vol. 50, no. 6, page. 3471 - 3477, 2021-06

Article

Impact of Operating Temperature on Pattern Recognition Accuracy of Resistive Array-Based Hardware Neural NetworksSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 42, no. 5, page. 763 - 766, 2021-05

Article

All-Solid-State Oxygen Ion Electrochemical Random-Access Memory for Neuromorphic ComputingSCIESCOPUS

ADVANCED ELECTRONIC MATERIALS, vol. 7, no. 5, 2021-05

Article

Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase BoundarySCIESCOPUS

Physica Status Solidi (A) Applications and Materials Science, vol. 218, no. 8, 2021-04

Article

Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface EngineeringSCIESCOPUS

Acs Applied Electronic Materials, vol. 3, no. 2, page. 629 - 638, 2021-02

Article

Single-Atom Quantum-Point Contact Switch Using Atomically Thin Hexagonal Boron NitrideSCIESCOPUS

SMALL, vol. 17, no. 7, 2021-02

Article

Defect Engineering to Achieve Wake-up Free HfO2-Based FerroelectricsSCIESCOPUS

ADVANCED ENGINEERING MATERIALS, vol. 23, no. 1, 2021-01

Article

Enhancement of ovonic threshold switching characteristics using nanometer-scale virtual electrode formed within ultrathin hafnium dioxide interlayerSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 118, no. 2, 2021-01

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