Mechanism of the enhancement of mid-infrared emission from GeS2-Ga2S3 chalcogenide glass-ceramics doped with tm3+
SCIE
SCOPUS
- Title
- Mechanism of the enhancement of mid-infrared emission from GeS2-Ga2S3 chalcogenide glass-ceramics doped with tm3+
- Authors
- Chanhhui Lin; Shixun Dai; Chao Liu; Bao'an Song; Yinsheng Xu; Feifei Chen; Heo, J
- Date Issued
- 2012-06-04
- Publisher
- APPLIED PHYSICS LETTERS
- Abstract
- We report the fabrication and characterization of 80GeS(2)center dot 20Ga(2)S(3):0.5Tm(2)S(3) chalcogenide glass-ceramics. A careful thermal process has led to the formation of similar to 50 nm Ga2S3 nanocrystals. By monitoring the H-3(5)-> F-3(4) Tm3+ transition, an almost fivefold increase of in the intensity and similar to 76 mu s prolongation in the lifetime of mid-infrared fluorescence at 3.8 mu m have been observed after crystallization. Element mapping evidenced that enhancement in the mid-infrared emission intensity was related to the formation of Ge-rich region in the glass-ceramics, consistent with spectroscopic results from glasses with different levels of GeS2 content and beta-GeS2 precipitation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4727900]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9758
- DOI
- 10.1063/1.4727900
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 100, no. 23, page. 231910-1 - 231910-4, 2012-06-04
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