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Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures SCIE SCOPUS

Title
Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
Authors
Son, JChobpattana, VMcSkimming, BMStemmer, S
Date Issued
2012-09-03
Publisher
American institute of physics
Abstract
The location and nature of fixed charge states in high-k/GaN metal-oxide-semiconductor capacitor structures are characterized by analyzing flatband voltage shifts in high-frequency capacitance-voltage measurements. It is shown that a significant fixed, positive sheet charge forms at Al2O3/GaN interfaces, but not at HfO2/GaN interfaces. Furthermore, an interface dipole is created at HfO2/Al2O3 interfaces, which causes an abrupt shift in the flat band voltage as HfO2 is introduced to form HfO2/Al2O3 bilayer dielectrics. The observed dependence of the flatband voltage shift on the relative thicknesses of the dielectrics comprising the bilayer dielectrics is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751466]
URI
https://oasis.postech.ac.kr/handle/2014.oak/9742
DOI
10.1063/1.4751466
ISSN
0003-6951
Article Type
Article
Citation
Applied Physics Letters, vol. 101, no. 10, 2012-09-03
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손준우SON, JUNWOO
Dept of Materials Science & Enginrg
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