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Reduced graphene oxide based flexible organic charge trap memory devices SCIE SCOPUS

Title
Reduced graphene oxide based flexible organic charge trap memory devices
Authors
Rani, AdilaSong, Ji-MinLee, Mi JungLee, JS
Date Issued
2012-12-03
Publisher
AMER INST PHYSICS
Abstract
A nonvolatile organic transistor memory device was developed using layer-by-layer assembly of 3-aminopropyltriethoxysilane (APTES) and solution-processed, reduced graphene oxide (rGO) as the charge trapping layer on flexible substrates. Reduction of graphene oxide and successful adsorption of the rGO on APTES-covered substrates were confirmed. The organic memory devices based on rGO exhibited reliable programmable memory operations, confirmed by program/erase operations, data retention, and endurance properties. These methods can potentially play a significant role in the fabrication of next-generation flexible nonvolatile memory devices based on graphene materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769990]
URI
https://oasis.postech.ac.kr/handle/2014.oak/9734
DOI
10.1063/1.4769990
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 101, no. 23, 2012-12-03
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이장식LEE, JANG SIK
Dept of Materials Science & Enginrg
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