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Cited 160 time in webofscience Cited 162 time in scopus
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dc.contributor.authorKim, YJ-
dc.contributor.authorLee, JH-
dc.contributor.authorYi, GC-
dc.date.accessioned2015-06-25T01:22:55Z-
dc.date.available2015-06-25T01:22:55Z-
dc.date.created2010-04-01-
dc.date.issued2009-11-23-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000020279en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9661-
dc.description.abstractWe report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic vapor-phase epitaxy. The surface morphology of the ZnO nanostructures on the graphene layers depended strongly on the growth temperature. Further, interesting growth behavior leading to the formation of aligned ZnO nanoneedles in a row and vertically aligned nanowalls was also observed and explained in terms of enhanced nucleation on graphene step edges and kinks. Additionally, the optical characteristics and carbon incorporation into ZnO were investigated using variable-temperature PL spectroscopy.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleVertically aligned ZnO nanostructures grown on graphene layers-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.3266836-
dc.author.googleKim, YJen_US
dc.author.googleLee, JHen_US
dc.author.googleYi, GCen_US
dc.relation.volume95en_US
dc.relation.issue21en_US
dc.relation.startpage213101en_US
dc.relation.lastpage213101en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.95, no.21, pp.213101 - 213101-
dc.identifier.wosid000272895100031-
dc.date.tcdate2019-01-01-
dc.citation.endPage213101-
dc.citation.number21-
dc.citation.startPage213101-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume95-
dc.contributor.affiliatedAuthorKim, YJ-
dc.identifier.scopusid2-s2.0-71549132710-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc121-
dc.description.scptc134*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorII-VI semiconductors-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthornanofabrication-
dc.subject.keywordAuthornanostructured materials-
dc.subject.keywordAuthornucleation-
dc.subject.keywordAuthorphotoluminescence-
dc.subject.keywordAuthorsemiconductor growth-
dc.subject.keywordAuthorsurface morphology-
dc.subject.keywordAuthorvapour phase epitaxial growth-
dc.subject.keywordAuthorwide band gap semiconductors-
dc.subject.keywordAuthorzinc compounds-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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김용진KIM, YONG JIN
Dept of Materials Science & Enginrg
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