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Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays

Title
Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays
Authors
An, SJChae, JHYi, GCPark, GH
POSTECH Authors
Yi, GC
Date Issued
Jan-2008
Publisher
AMER INST PHYSICS
Abstract
We report enhanced light output of GaN-based light-emitting diodes (LEDs) with vertically aligned ZnO nanorod arrays. The ZnO nanorod arrays were prepared on the top layer of GaN LEDs using catalyst-free metalorganic vapor phase epitaxy. Compared to conventional GaN LEDs, light output of GaN LEDs with the ZnO nanorod arrays increased up to 50% and 100% at applied currents of 20 and 50 mA, respectively. The source of the enhanced light output is also discussed. (C) 2008 American Institute of Physics.
URI
http://oasis.postech.ac.kr/handle/2014.oak/9638
DOI
10.1063/1.2903153
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 92, no. 12, 2008-01
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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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