Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays
- Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays
- An, SJ; Chae, JH; Yi, GC; Park, GH
- Date Issued
- AMER INST PHYSICS
- We report enhanced light output of GaN-based light-emitting diodes (LEDs) with vertically aligned ZnO nanorod arrays. The ZnO nanorod arrays were prepared on the top layer of GaN LEDs using catalyst-free metalorganic vapor phase epitaxy. Compared to conventional GaN LEDs, light output of GaN LEDs with the ZnO nanorod arrays increased up to 50% and 100% at applied currents of 20 and 50 mA, respectively. The source of the enhanced light output is also discussed. (C) 2008 American Institute of Physics.
- Article Type
- APPLIED PHYSICS LETTERS, vol. 92, no. 12, 2008-03-24
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