Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics
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- Title
- Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics
- Authors
- Kim, SH; Jang, J; Jeon, H; Yun, WM; Nam, S; Park, CE
- Date Issued
- 2008-05-05
- Publisher
- AMER INST PHYSICS
- Abstract
- The influence of hydroxyl groups on the hysteresis of pentacene field-effect transistors (FETs) and metal-insulator-semiconductor diodes containing poly(4-vinyl phenol) and poly(4-vinyl phenol-co-methyl methacrylate) (PVP-PMMA) gate dielectrics was investigated. The electrical characteristics and Fourier transform infrared spectroscopy measurements show that hysteresis is intimately related to the presence of free O-H groups in the polymer gate dielectrics. The methyl methacryl moieties in PVP-PMMA minimize residual water in the polymer and form hydrogen bonds with the hydroxyl groups, thus reducing the number of free O-H species. Therefore, pentacene FETs and inverters using PVP-PMMA gate dielectrics exhibit high, hysteresis-free performances. (C) 2008 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9635
- DOI
- 10.1063/1.2924772
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 92, no. 18, 2008-05-05
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