Open Access System for Information Sharing

Login Library

 

Article
Cited 38 time in webofscience Cited 47 time in scopus
Metadata Downloads

Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics SCIE SCOPUS

Title
Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics
Authors
Kim, SHJang, JJeon, HYun, WMNam, SPark, CE
Date Issued
2008-05-05
Publisher
AMER INST PHYSICS
Abstract
The influence of hydroxyl groups on the hysteresis of pentacene field-effect transistors (FETs) and metal-insulator-semiconductor diodes containing poly(4-vinyl phenol) and poly(4-vinyl phenol-co-methyl methacrylate) (PVP-PMMA) gate dielectrics was investigated. The electrical characteristics and Fourier transform infrared spectroscopy measurements show that hysteresis is intimately related to the presence of free O-H groups in the polymer gate dielectrics. The methyl methacryl moieties in PVP-PMMA minimize residual water in the polymer and form hydrogen bonds with the hydroxyl groups, thus reducing the number of free O-H species. Therefore, pentacene FETs and inverters using PVP-PMMA gate dielectrics exhibit high, hysteresis-free performances. (C) 2008 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9635
DOI
10.1063/1.2924772
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 92, no. 18, 2008-05-05
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
Read more

Views & Downloads

Browse